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DOI: 10.1039/A802202J (Paper) Reference Section for: Chem. Commun., 1998, 1447-1448

A two-step low pressure chemical vapour deposition process for the production of tungsten metal thin films

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David V. Baxter, Malcolm H. Chisholm and Shiow-Huey Chuang

Abstract

A two-step process for the production of W(m) thin films on Si(100) and SiO2/Si(100) is described involving the initial low pressure chemical vapour deposition of tungsten carbide from (ButCH2)3W≡CBut at 350 °C followed by a post-treatment with H2 (500–700 °C) or H2 plasma at 350–700 °C.

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