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Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

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Understanding surface morphology evolution in magnetron sputtered AlN templates: mitigating tensile stress and enhancing crystal quality

Li Jiang, Jianwei Ben, Ke Jiang, Shanli Zhang, Tong Wu, Zikai Nie, Entao Zhang, Shunpeng Lu, Xiaojuan Sun and Dabing Li

CrystEngComm, 2025, 27, 2895
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Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

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Formation mechanism of (10−13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy

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Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles

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Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition

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Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN Films

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Coatings, 2021, 11, 956
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Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics

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Design of Multilayered Porous Aluminum Nitride for Supercapacitor Applications

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Energy Fuels, 2021, 35, 12628
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Wafer-scale aluminium nitride nanostructures for solar-blind ultra-violet detection

Wusi Zhang, Feijie Chen, Difei Xue, Chang Liu, Kai Peng, Chenlong Chen and Peiwen Lv

Thin Solid Films, 2025, 813, 140619
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Improved Crystallinity of Annealed 0002 AlN Films on Sapphire Substrate

Bruno Comis Bersch, Tomàs Caminal Ros, Vegard Tollefsen, Erik Andrew Johannessen and Agne Johannessen

Materials, 2023, 16, 2319
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Compressive stress management for hillock-free AlGaN epitaxy on HTA-AlN templates using low-Al-content interlayer

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J. Semicond., 2026, 47, 022502
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Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

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Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperature-annealed AlN/Sapphire template

Ke Jiang, Simeng Liang, Xiaojuan Sun, Jianwei Ben, Liang Qu, Shanli Zhang, Yang Chen, Yucheng Zheng, Ke Lan, Dabing Li and Ke Xu

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Study of AlN based materials grown on nano-patterned sapphire substrates for deep ultraviolet LED applications

Zhaoying Chen, Jason Hoo, Yao Chen, Vincent Wang and Shiping Guo

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Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Hualong Wu, Kang Zhang, Chenguang He, Longfei He, Qiao Wang, Wei Zhao and Zhitao Chen

Crystals, 2021, 12, 38
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Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning

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Applied Physics Letters, 2020, 116
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Valence subbands profile regulation in AlGaN quantum well based on k·p theory

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Defect Analysis by X-ray Diffraction in Semipolar (11–22) AlN Grown by HVPE

Jianli Ji, Maosong Sun, Xu Li, Yong Lu, Ting Liu and Jicai Zhang

Crystal Growth & Design, 2025, 25, 8468
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High temperature lattice structure evolution of C-axis preferred orientation AlN thin films and its application in temperature measurement

Ling Dong, Yang Li, Jingwen Lv, Hongchuan Jiang, Xiaohui Zhao and Wanli Zhang

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Effect of NH3-flow modulation on the morphological properties of nonpolar a-plane AlGaN epilayers

Abbas Nasir, Xiong Zhang, M. Zakria, Jin Zhang, Guohua Hu and Yiping Cui

Superlattices and Microstructures, 2021, 159, 107045
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Achieving high mechanical properties and outstanding thermally conductive Al/AlN direct-bonded joints through interfacial oxide barrier elimination

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Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE

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Front. Phys., 2022, 10
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Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition

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Suppressing the luminescence of V-related point-defect in AlGaN grown by MOCVD on HVPE-AlN

Ke Jiang, Xiaojuan Sun, Jianwei Ben, Zhiming Shi, Yuping Jia, Yang Chen, Shanli Zhang, Tong Wu, Wei Lü and Dabing Li

Applied Surface Science, 2020, 520, 146369
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Discovery of a Structure Mediated by a Reconstructed Aluminum Atomic Layer at an AlN/Al2O3 Interface

Zhou Jiang, Zhaoji Huang, Qing Liang, Xiangyu Wu, Jianwei Ben, Dong Wang, Xinyan Zhou, Wenwen Li, Aofei Wei, Ning Wang, Xiaojuan Sun, Dabing Li, Lijun Zhang and Wei Zhang

Nano Lett., 2025, 25, 8782
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Epitaxial high-K barrier AlBN/GaN HEMTs

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Applied Physics Letters, 2025, 126
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing

Jianwei Ben, Zhiming Shi, Hang Zang, Xiaojuan Sun, Xinke Liu, Wei Lü and Dabing Li

Applied Physics Letters, 2020, 116
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Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films

Mingrui Liu, Hang Zang, Yuping Jia, Ke Jiang, Jianwei Ben, Shunpeng Lv, Dan Li, Xiaojuan Sun and Dabing Li

ACS Appl. Mater. Interfaces, 2024, 16, 16427
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Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

Kun Xing, Xueying Cheng, Liancheng Wang, Shirong Chen, Yun Zhang and Huaguo Liang

Journal of Crystal Growth, 2021, 570, 126207
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Origination and evolution of point defects in AlN film annealed at high temperature

Cuihong Kai, Hang Zang, Jianwei Ben, Ke Jiang, Zhiming Shi, Yuping Jia, Xingzhong Cao, Wei Lü, Xiaojuan Sun and Dabing Li

Journal of Luminescence, 2021, 235, 118032
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Extreme high temperature tolerant AlN thin film ultrasonic transducer and its application for bolt preload measurement

Yanghui Jiang, Xuechao Jing, Jiaqi Li, Xiaomei Zeng, Vasiliy Pelenovich, Chang Xu, Zechang Xiong, Jun Zhang and Bing Yang

Journal of Alloys and Compounds, 2025, 1027, 180498
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Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

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Semicond. Sci. Technol., 2021, 36, 123001
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Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Xu Li, Jianyun Zhao, Ting Liu, Yong Lu and Jicai Zhang

Materials, 2021, 14, 1722
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Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

Shangfeng Liu, Ye Yuan, Shanshan Sheng, Tao Wang, Jin Zhang, Lijie Huang, Xiaohu Zhang, Junjie Kang, Wei Luo, Yongde Li, Houjin Wang, Weiyun Wang, Chuan Xiao, Yaoping Liu, Qi Wang and Xinqiang Wang

J. Semicond., 2021, 42, 122804
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Non-polar a-plane AlN epitaxial films on r-plane sapphire with greatly reduced defect densities obtained by high-temperature annealing

Kun Xing, Guangxia Xie, Xueying Cheng, Yun Zhang and Qiang Chen

Journal of Crystal Growth, 2022, 597, 126855
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Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

Yuxuan Chen, Jianwei Ben, Fujun Xu, Jinchai Li, Yang Chen, Xiaojuan Sun and Dabing Li

Fundamental Research, 2021, 1, 717
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Recent Advances in AlN-Based Acoustic Wave Resonators

Hao Lu, Xiaorun Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Jie Dong and Xiaohua Ma

Micromachines, 2025, 16, 205
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Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations

Xianchun Peng, Jie Sun, Huan Liu, Liang Li, Qikun Wang, Liang Wu, Wei Guo, Fanping Meng, Li Chen, Feng Huang and Jichun Ye

J. Semicond., 2022, 43, 022801
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Temperature-Driven Twin Structure Formation and Electronic Structure of Epitaxially Grown Mg3Sb2 Films on Mismatched Substrates

Sen Xie, Yujie Ouyang, Wei Liu, Fan Yan, Jiangfan Luo, Xianda Li, Ziyu Wang, Yong Liu and Xinfeng Tang

Nanomaterials, 2022, 12, 4429
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Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films

Liqiong Deng, Fanping Meng, Ji Li, Fang Ye, Wei Guo and Jichun Ye

Journal of Alloys and Compounds, 2024, 997, 174997
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The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Gamze Yolcu, Irem Simsek, Reyhan Kekul, Ismail Altuntas, Sabit Horoz and Ilkay Demir

Micro and Nanostructures, 2022, 168, 207301
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Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

Nasir Alfaraj, Jung-Wook Min, Chun Hong Kang, Abdullah A. Alatawi, Davide Priante, Ram Chandra Subedi, Malleswararao Tangi, Tien Khee Ng and Boon S. Ooi

J. Semicond., 2019, 40, 121801
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Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing

L. Cancellara, S. Hagedorn, S. Walde, D. Jaeger and M. Albrecht

Journal of Applied Physics, 2022, 131
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Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field

Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng and Dabing Li

Nanoscale Res Lett, 2019, 14
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The Insertion of an AlN Spacer between the Barrier and the Channel Layer for a Polarization-Enhanced AlGaN-Based Solar-Blind Ultraviolet Detector

Tong Fang, Ke Jiang, Bingxiang Wang, Shanli Zhang, Zhiwei Xie, Jianwei Ben, Zihui Zhang, Yang Chen, Yuping Jia, Mingrui Liu, Shunpeng Lv, Xiaojuan Sun and Dabing Li

ACS Appl. Electron. Mater., 2024, 6, 2490
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A review of ultrawide bandgap materials: properties, synthesis and devices

Mingfei Xu, Dawei Wang, Kai Fu, Dinusha Herath Mudiyanselage, Houqiang Fu and Yuji Zhao

Oxford Open Materials Science, 2022, 2
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Polarity control and crystalline quality improvement of AlN thin films grown on Si(111) substrates by molecular beam epitaxy

Shizhao Fan, Yuhao Yin, Rong Liu, Haiyang Zhao, Zhenghui Liu, Qian Sun and Hui Yang

Journal of Applied Physics, 2024, 136
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Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate

Qingcheng Qin, Hangning Shi, Ye Yuan, Jiaxin Ding, Ailun Yi, Wenhui Xu, Min Zhou, Jian Zhang, Tongxin Lu, Yi Yang, Tiangui You, Xinqiang Wang and Xin Ou

Materials Science in Semiconductor Processing, 2024, 176, 108346
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Introducing voids around the interlayer of AlN by high temperature annealing

Jianwei Ben, Jiangliu Luo, Zhichen Lin, Xiaojuan Sun, Xinke Liu and Xiaohua Li

Chinese Phys. B, 2022, 31, 076104
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