Issue 22, 2023

A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices

Abstract

Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W−1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.

Graphical abstract: A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices

Supplementary files

Article information

Article type
Paper
Submitted
14 Tem 2023
Accepted
05 Eki 2023
First published
06 Eki 2023
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2023,5, 6210-6215

A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices

H. Hu, W. Zhen, Z. Yue, R. Niu, F. Xu, W. Zhu, K. Jiao, M. Long, C. Xi, W. Zhu and C. Zhang, Nanoscale Adv., 2023, 5, 6210 DOI: 10.1039/D3NA00525A

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