Issue 33, 2024

Device engineering of chalcogenide photodiodes with reduced dark current and enhanced stability for underwater light communication

Abstract

Antimony based chalcogenides, such as Sb2S3 and Sb2Se3, have garnered attention in the fields of photovoltaics and photodetection due to their excellent optoelectronic properties, environmental stability, simple composition, and low-cost fabrication. However, most of the efficient Sb2S3- and Sb2Se3-based devices are fabricated based on organic materials as the hole transport layer and costly metals as electrodes, which deteriorate the device stability, increase operational complexity and device fabrication cost. In this work, we propose the device engineering of Se and Sb to replace the organic interlayers and metal electrodes. An ultra-thin Sb2Se3 layer serves as the hole transport layer, formed through vacuum evaporation and in situ annealing. This approach enhances charge transport capacity and reduces leakage current. The optimized Sb2S3 photodiodes exhibit exceptional performance metrics, including ultra-low dark current density, excellent specific detectivity, and superior stability even under water, making them ideal for light communication. More importantly, this novel Se/Sb structure has been successfully extended to other chalcogenide semiconductor materials, showcasing significant potential for practical applications.

Graphical abstract: Device engineering of chalcogenide photodiodes with reduced dark current and enhanced stability for underwater light communication

Supplementary files

Article information

Article type
Paper
Submitted
24 เม.ย. 2567
Accepted
15 ก.ค. 2567
First published
16 ก.ค. 2567

J. Mater. Chem. A, 2024,12, 21782-21789

Device engineering of chalcogenide photodiodes with reduced dark current and enhanced stability for underwater light communication

S. Bai, R. Li, X. Chen, Z. Jia, Y. Liu and Q. Lin, J. Mater. Chem. A, 2024, 12, 21782 DOI: 10.1039/D4TA02832E

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