Issue 8, 2021

Breaking through the “3.0 eV wall” of energy band gap in mid-infrared nonlinear optical rare earth chalcogenides by charge-transfer engineering

Abstract

Increasing the energy band gap under the premise to maintain a large nonlinear optical (NLO) response is a challenging issue for the exploration and molecular design of mid-infrared nonlinear optical crystals. Utilizing a charge-transfer engineering method, we designed and synthesized a rare earth chalcogenide, KYGeS4. With an NLO effect as large as that in AgGaS2, KYGeS4 breaks through the limitation of energy band gap, i.e., the “3.0 eV wall”, in NLO rare earth chalcogenides, and thus exhibits an excellent comprehensive NLO performance. First-principles electronic structure analysis demonstrates that the large band gap in KYGeS4 is ascribed to the decreased covalency of Y–S bonds by transferring charge from [YS7] to [GeS4] polyhedra. The charge-transfer engineering strategy would have significant implications for the exploration of good-performance NLO crystals.

Graphical abstract: Breaking through the “3.0 eV wall” of energy band gap in mid-infrared nonlinear optical rare earth chalcogenides by charge-transfer engineering

Supplementary files

Article information

Article type
Communication
Submitted
05 เม.ย. 2564
Accepted
22 มิ.ย. 2564
First published
22 มิ.ย. 2564

Mater. Horiz., 2021,8, 2330-2334

Breaking through the “3.0 eV wall” of energy band gap in mid-infrared nonlinear optical rare earth chalcogenides by charge-transfer engineering

D. Mei, W. Cao, N. Wang, X. Jiang, J. Zhao, W. Wang, J. Dang, S. Zhang, Y. Wu, P. Rao and Z. Lin, Mater. Horiz., 2021, 8, 2330 DOI: 10.1039/D1MH00562F

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