Issue 29, 2024

All-inorganic Sb2S3-based two-terminal tandem solar cells enable over 10.9% efficiency employing a concise interconnection layer

Abstract

Tandem solar cells (TSCs) present a prospective avenue to surpass the theoretical efficiency limits of single-junction solar cells (SJSCs). Antimony sulfide (Sb2S3), a 1.7 eV bandgap semiconductor, holds high potential to serve as the top-cell absorber for TSCs. Up to now, there are few reports on Sb2S3 two-terminal (2T) TSCs due to the limit of the hole transport layer (HTL) and interconnection layer. Herein, we succeed in implementing Sb2S3-based 2T-TSCs with the assistance of lead sulfide quantum dot (PbS QD) rear cells. Firstly, by using the 1,2-ethanedithiol capped quantum dots as HTL, the power conversion efficiency (PCE) of the Sb2S3 SJSC reaches 7.82%, a top value among all-inorganic Sb2S3 SC reports. More importantly, an efficient Au recombination layer is developed to bridge the two subcells and obtain the summation of the subcell open-circuit voltages (1.128 V) with a minimal voltage loss rate of ∼0.8%. After the modulation of the subcell absorber thickness by optical simulation and device investigation, the champion device achieves the photocurrent matching and its 2T-TSC PCE reaches 10.92%, the highest reported value among Sb2S3-based TSCs. Our work opens the door for Sb2S3 based 2T-TSCs, and is expected to trigger the hot research interest for all-inorganic antimony-based TSCs.

Graphical abstract: All-inorganic Sb2S3-based two-terminal tandem solar cells enable over 10.9% efficiency employing a concise interconnection layer

Supplementary files

Article information

Article type
Paper
Submitted
20 มี.ค. 2567
Accepted
12 มิ.ย. 2567
First published
12 มิ.ย. 2567

J. Mater. Chem. A, 2024,12, 18148-18156

All-inorganic Sb2S3-based two-terminal tandem solar cells enable over 10.9% efficiency employing a concise interconnection layer

S. Chen, X. Zhao, G. Shen, A. Ke, B. Liu, H. Hsu, C. Chen, P. Yang, J. Tang and H. Song, J. Mater. Chem. A, 2024, 12, 18148 DOI: 10.1039/D4TA01881H

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