Issue 4, 2023

Orientation–polarization dependence of pressure-induced Raman anomalies in anisotropic 2D ReS2

Abstract

We report an in situ high-pressure (0–30.24 GPa) optical study of the 2D ReS2 crystal under four specific configurations of sample orientation and laser polarization. Unlike the horizontal measurement configuration that has been widely used, under the vertical sample configuration we observe the anomalous disappearance behavior of Raman modes. Through analyzing the peak evolution under different configurations with tensor calculations, we identify the effect of pressure on different components in the full 3 × 3 Raman tensor of the anisotropic ReS2 crystal. These results provide new evidence on the remarkable tunability of pressure engineering on the crystal structure, and our methods offer an additional degree of freedom for studying pressure engineering on 2D anisotropic materials.

Graphical abstract: Orientation–polarization dependence of pressure-induced Raman anomalies in anisotropic 2D ReS2

Supplementary files

Article information

Article type
Communication
Submitted
19 டிசம்பர் 2022
Accepted
07 பிப்ரவரி 2023
First published
07 பிப்ரவரி 2023

Nanoscale Horiz., 2023,8, 516-521

Orientation–polarization dependence of pressure-induced Raman anomalies in anisotropic 2D ReS2

T. Wen, M. Zhang, J. Li, C. Jiao, S. Pei, Z. Wang and J. Xia, Nanoscale Horiz., 2023, 8, 516 DOI: 10.1039/D2NH00584K

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