Epitaxial growth of a high-quality GaN/AlN heterostructure for the development of an AlN-back barrier high-electron-mobility-transistor

Sitong Chen, Qiushuang Chen, Fang Ye, Ge Gao, Li Chen, Jie Lin, Meng Cao, Jichun Ye and Wei Guo

CrystEngComm, 2025, 27, 4011
DOI: 10.1039/D5CE00205B

Investigation on chemical mechanical polishing of Ga-faced GaN crystal with weak alkaline slurry

Qiubo Li, Lei Liu, Jiaoxian Yu, Shouzhi Wang, Guodong Wang, Zhongxin Wang, Zhanguo Qi, Xuanyi Zhao, Guangxia Liu, Xiangang Xu and Lei Zhang

Applied Surface Science, 2024, 653, 159396
DOI: 10.1016/j.apsusc.2024.159396

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Xuanyi Zhao, Shouzhi Wang, Lei Liu, Qiubo Li, Jiaoxian Yu, Guodong Wang, Chang Liang, Zhongxin Wang, Han Hao, Xiangang Xu and Lei Zhang

Adv Materials Inter, 2025, 12
DOI: 10.1002/admi.202301032

Progress in GaN Single Crystals: HVPE Growth and Doping

Zhanguo QI, Lei LIU, Shouzhi WANG, Guogong WANG, Jiaoxian YU, Zhongxin WANG, Xiulan DUAN, Xiangang XU and Lei ZHANG

Journal of Inorganic Materials, 2023, 38, 243
DOI: 10.15541/jim20220607

Revealing Mechanisms of an Eco-Friendly GaN Electrochemical Mechanical Removal Process Modified with Green Fenton Reaction

Yang Peng, Zirui Wang, Qingyu Yao, Feng Cheng, Tianyu Zhang, Yuguang Zhu, Yongguang Wang and Chuanyang Wang

Langmuir, 2025, 41, 4307
DOI: 10.1021/acs.langmuir.4c05003

Influence of lattice mismatch of nano-holed substrate on the crystallization of Lennard-Jones liquids

Xiaodong Su, Huijun Zhang, Shuming Peng, Xiaosong Zhou, Tingting Sui, Chubin Wan and Xin Ju

Journal of Molecular Liquids, 2025, 430, 127673
DOI: 10.1016/j.molliq.2025.127673

The Mechanism of Spontaneous Nucleation of AlN and Its Application as Substrates in HEMTs

Ruixian Yu, Wenhao Cao, Yajun Zhu, Peng Cui, Liu Wang, Kai Jiang, Wenjing Tang, Gang Zhao, Lei Zhang and Wei Xia

Appl. Phys. A, 2025, 131
DOI: 10.1007/s00339-025-08445-7

Wafer-scale Ge freestanding membranes for lightweight and flexible optoelectronics

Tadeáš Hanuš, Bouraoui Ilahi, Alexandre Chapotot, Hubert Pelletier, Jinyoun Cho, Kristof Dessein and Abderraouf Boucherif

Materials Today Advances, 2023, 18, 100373
DOI: 10.1016/j.mtadv.2023.100373

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

Yinghao Wang, Lianxin Li, Tinghong Gao, Yue Gao, Yutao Liu and Quan Xie

Crystal Growth & Design, 2023, 23, 6876
DOI: 10.1021/acs.cgd.3c00701

Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

Qiubo Li, Shouzhi Wang, Lei Liu, Kepeng Song, Jiaoxian Yu, Guodong Wang, Jingliang Liu, Peng Cui, Siheng Chen, Defu Sun, Zhongxin Wang, Xiangang Xu and Lei Zhang

Applied Surface Science, 2025, 679, 161207
DOI: 10.1016/j.apsusc.2024.161207

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Yong Deng, Nan Xie, Wenyu Hu, Zhenyu Ma, Fujun Xu, Longqing Chen, Wenbin Qiu, Lin Zhao, Hong Tao, Bo Wu, Yi Huang, Jian Ma, Xiaoyi Wang, Xuqi Zhang, Yang Qiu, Xudong Cui, Chaoyuan Jin, Marie-Pierre Chauvat, Pierre Ruterana and Thomas Walther

ACS Appl. Nano Mater., 2023, 6, 4262
DOI: 10.1021/acsanm.2c05372