Issue 22, 2021

Fast preparation of controllable nitrogen-atom-substituted graphyne film for use in field effect transistor devices

Abstract

It has been predicted that the introduction of heteroatoms into graphyne (GY) will be able to improve the properties of GY and increase its range of applications. However, it is difficult to synthesize GY, which is linked through only one acetylenic bond (–C[triple bond, length as m-dash]C–) between any two adjacent benzene rings. Herein, we demonstrate an innovative interfacial synthetic method for rapid preparation of nitrogen-substituted GY (N-GY) films. Notably, as-prepared N-GY films that offer a determined morphology and well-established N atoms can be utilized as semiconductor films for field-effect transistor (FET) devices. With the increase in the number of N atoms in N-GY films, the carrier mobility of the prepared FET devices based on those N-GY films was increased. An average mobility of 9.8 cm2 V−1 s−1 with a gate operating voltage lower than 5 V was measured for such rapidly prepared N-GY films, implying that interfacial synthesis can provide a facile avenue to obtain GY-based electronic materials. Thus, GY-based materials have the potential to become very promising candidates for incorporation into electronic devices.

Graphical abstract: Fast preparation of controllable nitrogen-atom-substituted graphyne film for use in field effect transistor devices

  • This article is part of the themed collection: Graphyne

Supplementary files

Article information

Article type
Research Article
Submitted
18 Mei 2021
Accepted
09 Sep 2021
First published
24 Sep 2021

Mater. Chem. Front., 2021,5, 7993-8001

Fast preparation of controllable nitrogen-atom-substituted graphyne film for use in field effect transistor devices

Z. Yang, X. Ren, X. Ma, Y. Song, X. Hu, M. Zhang, Y. Li, C. Xie, X. Li, J. Li and C. Huang, Mater. Chem. Front., 2021, 5, 7993 DOI: 10.1039/D1QM00736J

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