Two-Dimensional Halide Perovskite Memristors for Resistive Switching Memory Systems

Abstract

Two-dimensional (2D) halide perovskites have surfaced as a dynamic platform for energy-efficient resistive switching memories. The atomic-scale slicing into Ruddlesden–Popper, Dion–Jacobson, vacancy-ordered, and single-crystal configurations allow for control over quantum confinement, ion transport, and interface energetics. This review looks into the latest advancements in the design, processing, and integration of devices for low-power memristors using 2D halide perovskite structures. The properties of solution-based spin coating and single-source vapor deposition are analyzed in terms of their effectiveness in producing vertically aligned grains, defect-passivated surfaces, and pinhole-free ultrathin films on both rigid and flexible substrates. The rectification and multilevel conductance, caused by built-in potential barriers and precise compliance control, enable selector-free crossbar arrays while reducing sneak current. Moreover, biologically inspired pulse procedures exhibit short-term dynamics and long-term potentiation, emphasizing the significant potential for neuromorphic devices. The insights gathered in this compilation offer actionable strategies for evolving 2D halide perovskites from their potential in the lab into dependable, multifunctional components for advanced memory and computing technologies.