Issue 9, 2023

Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices

Abstract

A spin-valve heterojunction plays a vital role in many technologies such as non-volatile magnetic random-access memories (MRAMs) and high-density magnetic recording. In particular, a spin-valve device based on two-dimensional van der Waals (vdW) heterostructures offers an excellent route for low power consumption and miniaturization of spintronic devices. However, the Curie temperature (TC) of 2D vdW ferromagnetic crystals is mostly lower than room temperature, and the spin-valve heterostructures of room-temperature ferromagnetic 2D crystals are rare. It is necessary and very challenging to realize the room-temperature spin-valve heterojunctions of 2D ferromagnetic crystals. We prepare a 2D room-temperature, ferromagnetic crystal based 2D vdW Fe3GaTe2/MoSe2/Fe3GaTe2 ferromagnet/semiconductor 2D van der Waals heterojunction. The magnetoresistance (MR) of this heterojunction device reaches 3.7% at room temperature (T = 300 K) and 37.7% at 2 K. Importantly the spin-valve effect can still operate at bias currents as low as 10 nA at room temperature in the ferromagnet/semiconductor 2D van der Waals heterojunction. We open a realistic path to 2D magnetic tunnel junctions for next generation spintronic applications at room temperature.

Graphical abstract: Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices

Supplementary files

Article information

Article type
Paper
Submitted
26 dec 2022
Accepted
24 jan 2023
First published
24 jan 2023

CrystEngComm, 2023,25, 1339-1346

Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices

H. Yin, P. Zhang, W. Jin, B. Di, H. Wu, G. Zhang, W. Zhang and H. Chang, CrystEngComm, 2023, 25, 1339 DOI: 10.1039/D2CE01695H

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