Issue 15, 2016

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Abstract

Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

Graphical abstract: Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Supplementary files

Article information

Article type
Communication
Submitted
19 feb 2016
Accepted
16 mar 2016
First published
17 mar 2016
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2016,8, 7849-7853

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

A. Angı, R. Sinelnikov, A. Meldrum, J. G. C. Veinot, I. Balberg, D. Azulay, O. Millo and B. Rieger, Nanoscale, 2016, 8, 7849 DOI: 10.1039/C6NR01435F

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