Issue 21, 2014

Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

Abstract

A metal–organic monolayer–semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface.

Graphical abstract: Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

Supplementary files

Article information

Article type
Paper
Submitted
31 okt 2013
Accepted
10 jan 2014
First published
28 jan 2014

Phys. Chem. Chem. Phys., 2014,16, 9960-9965

Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

K. Uosaki, H. Fukumitsu, T. Masuda and D. Qu, Phys. Chem. Chem. Phys., 2014, 16, 9960 DOI: 10.1039/C3CP54619E

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