Amorphous GaN: Polyamorphism and crystallization at high pressure

Murat Durandurdu

Computational Materials Science, 2024, 241, 113062
DOI: 10.1016/j.commatsci.2024.113062

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Xuanyi Zhao, Shouzhi Wang, Lei Liu, Qiubo Li, Jiaoxian Yu, Guodong Wang, Chang Liang, Zhongxin Wang, Han Hao, Xiangang Xu and Lei Zhang

Adv Materials Inter, 2025, 12
DOI: 10.1002/admi.202301032

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications

Xingfa Gao, Yuzhen Huang, Rixuan Wang, Yinglun Sun and Lai Wang

Light Sci Appl, 2026, 15
DOI: 10.1038/s41377-025-02052-0

Investigation of removal mechanisms and conditions of GaN under ultrafast laser irradiation and their effects on surface micro/nano structures

Siyi Ji, Chunjin Wang, Benny C. F. Cheung, Wei Zhang, Chunming Wang and Xiong Zhang

Journal of Laser Applications, 2025, 37
DOI: 10.2351/7.0001750

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

Xueqing Chen, Nan Li, Zerong Xing, Jiasheng Zu, Xianwei Meng, Zhuquan Zhou, Qian Li, Lifeng Tian, Yuntao Cui and Jing Liu

APL Materials, 2024, 12
DOI: 10.1063/5.0217625

Multiscale investigation of mechanical anisotropy and machining-induced damage mechanisms in single-crystal gallium Nitride: Insights from first-principles calculations and molecular dynamics simulations

Xiaoning Wen, Jiayun Deng, Zilei Bai, Jiacheng Geng, Hua Wei, Hanbao Liu, Feng Qiu and Feng Hui

Materials Science in Semiconductor Processing, 2025, 199, 109837
DOI: 10.1016/j.mssp.2025.109837

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Nahid Sultan Al-Mamun, Abu Jafar Rasel, Zahabul Islam, Marian B Tzolov, Christopher M Smyth, Aman Haque, Douglas E Wolfe, Fan Ren and Stephen Pearton

J. Phys. D: Appl. Phys., 2025, 58, 045105
DOI: 10.1088/1361-6463/ad8b58

Spontaneous Phase Transition Charge of Liquid Metals Induced NH3 Decomposition To Achieve GaN Nanomaterials at Room Temperature

Jile Wang, Huiqin Yang, Yiqian Wang, Weihua Mu, Boudmyxay Khampheng, Qin Wang, Liangfei Duan and Tingting Guo

ACS Appl. Nano Mater., 2024, 7, 25774
DOI: 10.1021/acsanm.4c04929

First-principles study of mechanical properties, generalized stacking fault energy and strain effects in wurtzite GaN

Shaorong Li, Lin Zhang, Xiaozhi Wu, Huaze Zhu, Chuhan Cao, Wenzhi Shen, Tongtong Tian, Huan Wu and Shengqiang Ma

Physica B: Condensed Matter, 2026, 726, 418270
DOI: 10.1016/j.physb.2026.418270

Scratch-induced deformation of GaN single crystals: Experimental and simulation insights into the influence of indenter and crystal orientation

Zhijie Zhang, Zhenqiao Zhang, Wenjuan Xing, Zhonghan Yu, Yingying Wang, Jinpeng Xu, Shunbo Wang and Hongwei Zhao

Tribology International, 2026, 221, 112022
DOI: 10.1016/j.triboint.2026.112022

Anisotropic Properties and Atomic-Scale Etching Mechanisms of Ga-Face GaN: A Comparative Study of Acidic and Alkaline Solutions

Ye Chen, Xi Chen, Yan Xing, Yan Gu, Yaxin Gao and Zaifa Zhou

Langmuir, 2026, 42, 6871
DOI: 10.1021/acs.langmuir.5c06358

氮化镓基半导体激光器研究及进展（特邀）

曹文彧 Cao Wenyu, 孟令海 Meng Linghai, 雷孟铼 Lei Menglai, 李曙琨 Li Shukun, 于果 Yu Guo, 陈焕卿 Chen Huanqing, 陈伟华 Chen Weihua and 胡晓东 Hu Xiaodong

Chin. J. Laser, 2025, 52, 0501015
DOI: 10.3788/CJL241245

Revealing threading dislocations in epitaxial GaN: a comparative study of electron channeling contrast imaging, KOH etch, and TEM characterization

Jacopo Frascaroli, Andrea Serafini, Fabiana Vento, Francesco Somaini, Nicolò Piluso, Andrea Severino, Cristiano Calabretta, Isabella Mica and Davide Codegoni

Semicond. Sci. Technol., 2026, 41, 025009
DOI: 10.1088/1361-6641/ae3edf

Advancements in nanoporous GaN distributed bragg reflectors: a comprehensive review

Yuganesini Naidu Siva Kumar, Mundzir Abdullah, Sabah M Mohammad, Ahmad Syazwan Ahmad Kamal and Dian Alwani Zainuri

Phys. Scr., 2025, 100, 055550
DOI: 10.1088/1402-4896/adcdd3