Mirabbos
Hojamberdiev
*ab,
Ronald
Vargas
cd,
Lorean
Madriz
cd,
Dilshod
Nematov
ef,
Ulugbek
Shaislamov
g,
Hajime
Wagata
h,
Yuta
Kubota
b,
Kunio
Yubuta
i,
Katsuya
Teshima
i and
Nobuhiro
Matsushita
b
aMads Clausen Institute, University of Southern Denmark, Alsion 2, 6400 Sønderborg, Denmark
bDepartment of Materials Science and Engineering, School of Materials and Chemical Technology, Institute of Science Tokyo, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan. E-mail: mirabbos@mci.sdu.dk
cInstituto Tecnológico de Chascomús (INTECH), Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Universidad Nacional de San Martín (UNSAM), Avenida Intendente Marino, Km 8, 2, B7130IWA Chascomús, Provincia de Buenos Aires, Argentina
dEscuela de Bio y Nanotecnologías, Universidad Nacional de San Martín (UNSAM), Avenida Intendente Marino, Km 8, 2, B7130IWA Chascomús, Provincia de Buenos Aires, Argentina
ePhysical−Technical Institute, National Academy of Sciences of Tajikistan, Dushanbe 734063, Tajikistan
fSchool of Optoelectronic Engineering & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
gCenter for Development of Nanotechnology at the National University of Uzbekistan, University Str. 4, 100174 Tashkent, Uzbekistan
hDepartment of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1-D615 Higashimita, Tama, Kawasaki 214-8571, Japan
iInstitute for Aqua Regeneration, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
First published on 30th June 2025
Tantalum oxynitride (TaON), a member of the transition metal oxynitride family, shows strong potential for solar water splitting due to its tunable optoelectronic properties and visible-light absorption. However, the selective synthesis of thermodynamically stable β-TaON with high phase purity remains challenging because of competing phase formation and sensitivity to processing conditions. In this study, we demonstrate a systematic approach to synthesizing β-TaON by precisely controlling the oxygen partial pressure during the ammonolysis of Ta2O5. The oxygen partial pressure is found to critically govern the sequential phase transformation from Ta2O5 to Ta3N5, with 0.25 L h−1 delineating the narrow synthesis window required for obtaining phase-pure β-TaON. Comprehensive structural, morphological, optical, and chemical characterizations, complemented by density functional theory (DFT) calculations, reveal strong correlations between nitrogen incorporation, band structure modulation, light absorption, and charge transport properties. Photoelectrochemical (PEC) measurements under simulated solar illumination present that mixed-phase β-TaON/Ta3N5 heterostructures exhibit significantly enhanced photocurrent densities, the possibility of operation at higher power densities, and a favorable band alignment conducive to efficient water oxidation due to enhanced light absorption, effective spatial separation of charge carriers, and improved interfacial charge transfer. The introduction of a sacrificial electron donor further enhances PEC performance by promoting interfacial charge transfer and suppressing charge carrier recombination. These findings establish oxygen partial pressure as a critical synthesis parameter for controlling phase composition and tuning the optoelectronic properties of tantalum (oxy)nitrides, offering a promising strategy for the development of high-performance photoanodes for solar fuel production.
Despite the structural richness of TaON polymorphs, the β-phase remains the most intensively investigated due to its thermodynamic stability and promising photocatalytic activity. However, its synthesis is often complicated by competing phase formation, stoichiometric deviations, and defect generation during ammonolysis. Among the various polymorphs, β-TaON has been intensively explored for solar water splitting. Although a quantum yield of 10% for photocatalytic O2 evolution has already been reported for β-TaON,17 synthesizing β-TaON with high phase purity, an optimal N:
O stoichiometry, and well-defined morphology18,19 remains challenging, requiring precise control over key parameters, such as reaction temperature, reaction time, nitrogen source, etc. Especially, conventional synthesis methods often result in the formation of Ta3N5 due to the relatively low thermodynamic stability of β-TaON, which can adversely impact its performance. To suppress the formation of Ta3N5 during the synthesis of β-TaON, Orhan et al.20 employed a moisturized ammonia atmosphere, generated by passing the commercial ammonia gas through water prior to its introduction into the reaction furnace. Rohloff et al.21 studied the role of synthesis conditions on structural defects and lattice strain in β-TaON using a mixture of ammonia and oxygen, and revealed that the heavily anisotropically microstrained β-TaON was less effective in photochemical and photoelectrochemical water oxidation in comparison to the unstrained one, due to the lattice defects acting as charge carrier traps.22 Yoon et al.23 studied the influence of the ammonolysis temperature (800–1000 °C) of Ta2O5 on the photocatalytic activity of β-TaON and achieved the highest oxygen evolution rate of 220 μmol g−1 h−1 for β-TaON synthesized at 800 °C. Recently, Kodera and Sayama24 investigated the degree of nitridation of Ta2O5 to β-TaON by quantitatively analyzing the change in the weight of a powder after nitridation and identified three regions. They found that although XRD patterns indicated phase-pure β-TaON, the sample nitrided for the initial 1 h exhibited a higher oxygen evolution activity of 250 μmol h−1 compared to the sample nitrided for 15 h. This indicates that careful optimization of the nitridation process plays a crucial role in enhancing the photocatalytic efficiency of β-TaON.
In this study, we report a systematic approach to synthesizing phase-pure β-TaON by precisely controlling the oxygen partial pressure (pO2), which was varied by adjusting the O2 flow rate from 0 to 0.35 L h−1, during the ammonolysis of Ta2O5. The phase transitions from tantalum oxide to oxide nitride and from tantalum oxide nitride to tantalum nitride were thoroughly investigated to assess their influence on phase purity, crystallinity, particle morphology, size distribution, optical properties, and photoelectrochemical performance. Density functional theory (DFT) calculations were employed to elucidate the electronic structures, density of states, and carrier effective masses, revealing correlations between structural and electronic properties and photoredox performance. In addition to structural and optical characterization, photoelectrochemical (PEC) measurements were conducted under solar irradiation to assess the charge carrier dynamics of the synthesized materials. To better probe surface-related processes and overcome potential limitations in water oxidation activity, a sacrificial electron donor (SED) was employed. The photocurrent–potential behavior and the variation of open-circuit potential (OCP) with irradiance provided insight into the balance between charge transfer and recombination processes. These measurements highlight the role of oxygen partial pressure during synthesis in determining the photoelectrochemical response of tantalum (oxy)nitrides. The findings of this study offer a pathway for optimizing the synthesis of tantalum oxide nitride and tantalum nitride for energy conversion applications.
The ultraviolet-visible (UV-Vis) diffuse reflectance spectra of the samples were measured using an Evolution 220 UV-vis spectrometer (Thermo Fisher Scientific).
E (vs. RHE) = E (vs. Ag/AgCl) + 0.059 × pH + 0.197 | (1) |
Linear sweep voltammetry (LSV) was conducted at a scan rate of 10 mV s−1. The photoelectrochemical power density (P) was estimated from the photocurrent response using the equation:
P = J × (E0 − E) | (2) |
EHSExc = αEHF,SRx(ω) + (1 − α)EPBE,SRx(ω) + EPBE,LRx(ω) + EPBEx | (3) |
Following the calculation of the electronic structures of the studied materials, the effective masses of charge carriers were estimated. These values were easily derived from the curvature of the electronic bands, which corresponds to the second derivative of the energy with respect to the wave vector. The effective masses for holes and electrons were calculated using the equation:
![]() | (4) |
Finally, at pO2 = 0 L h−1, the XRD pattern exhibits intense and well-defined reflections solely attributable to Ta3N5, confirming the complete transformation to this nitrogen-rich phase in the absence of oxygen. The XRD results present a systematic phase transformation pathway governed by pO2 under the applied synthesis conditions:
Among different oxygen partial pressures, pO2 = 0.25 L h−1 was found to be favorable to synthesize phase-pure β-TaON, which acts as an important intermediate during phase transformation from Ta2O5 to Ta3N5. This tunable phase transformation pathway is pivotal for tailoring the optoelectronic and catalytic properties of tantalum-based materials. Furthermore, it offers a viable one-step synthesis route for synthesizing Ta2O5/β-TaON and β-TaON/Ta3N5 composites with potential applications in energy conversion.
Fig. 2 shows the scanning electron microscopy (SEM) images of the as-received Ta2O5 and 0.35-O2, 0.25-O2, 0.15-O2, 0.05-O2, and 0-O2 samples synthesized under varying oxygen partial pressures (pO2) of 0.35, 0.25, 0.15, 0.05, and 0 L h−1, respectively. In Fig. 2a, the as-received Ta2O5 exhibits agglomerated large particles with sizes ranging from approximately 100–300 nm. The particles possess well-defined boundaries and a relatively porous structure, indicative of loosely packed morphology. When pO2 is set to 0.35 L h−1, the microstructure gradually transforms into a highly porous and sponge-like network composed of fine, interconnected crystals, revealing the onset of the lattice condensation process caused by the partial substitution of O2− with N3− in the anion network (Fig. 2b).41,42 A similar phenomenon was previously reported by Hojamberdiev et al.18,43,44 for oxynitride systems, where anion substitution led to significant morphological and structural modifications. The reduction in pO2 to 0.25 L h−1 maintains the overall sponge-like network with a noticeable decrease in pore size (Fig. 2c). At pO2 = 0.15 L h−1, the number of pores gradually diminishes, and irregularly shaped and denser particles begin to form (Fig. 2d). Denser particles with an average size of 100–200 nm are formed on the surface of larger porous particles at pO2 = 0.05 L h−1, while the number of pores continues to decrease, implying surface reconstruction (Fig. 2e). Finally, pO2 = 0 L h−1, the sample shows densely packed morphology with irregular particles with an average size of 150–250 nm and a limited porosity. Some particle surfaces also feature regions with poorly defined outlines and indistinct textural contrasts, which may be associated with an amorphous or low crystalline nature (Fig. 2f). The SEM results indicate that phase-pure β-TaON with a porous morphology can be synthesized at pO2 = 0.25 L h−1. This porous structure is particularly advantageous for the enhanced adsorption of reactants and intermediates, enhancing the efficiency of photocatalytic reactions.
Fig. 3 shows the bright-field TEM and HRTEM images and their power spectra (obtained from the part of a single crystal) of the Ta2O5 and 0.25-O2 and 0-O2 samples synthesized at pO2 = 0.25 and 0 L h−1, respectively. The TEM image of Ta2O5 (Fig. 3a) reveals loosely agglomerated nanoparticles with irregular morphologies and the presence of some poorly crystalline particles. In Fig. 3b, the TEM image of the 0.25-O2 sample shows highly agglomerated β-TaON particles, suggesting a compact and porous structure. The elongated particles exhibit well-defined boundaries with relatively higher electron contrast. The TEM image of the 0-O2 sample (Fig. 3c) shows clustered nanostructures of Ta3N5, characterized by a dense appearance and irregular round shapes. Although its morphology is somewhat similar to that of Ta2O5, the 0-O2 sample features more defined particle edges and porosity. The HRTEM image of Ta2O5 (Fig. 3a) shows well-defined lattice fringes uniformly extending across the entire particle, indicating a high degree of crystallinity. The observed lattice spacing of 0.39 nm corresponds to the (100) crystallographic plane, consistent with orthorhombic Ta2O5. The clear contrast and alignment of the lattice fringes suggest that the particle is either single-crystalline or composed of large crystalline domains. In the case of the 0.25-O2 sample (Fig. 3b), highly ordered lattice fringes with continuous periodicity are observed, which is characteristic of a single crystalline structure with minimal defects (e.g., a stacking fault). The lattice spacing of 0.49 nm corresponds to the (100) crystallographic plane of β-TaON, and the lattice fringe orientation indicates anisotropic growth along specific crystallographic directions. The HRTEM image of the 0-O2 sample shows moderately crystalline domains with visible lattice fringes of 0.35 nm, which can be indexed to the (110) crystallographic plane of orthorhombic Ta3N5 (Fig. 3c). The corresponding power spectrum of Ta2O5 shows a well-ordered atomic arrangement perpendicular to the (100) plane (Fig. 3a). The power spectrum of the 0.25-O2 sample exhibits sharp and symmetric diffraction spots aligned along the [100] zone axis, confirming the well-ordered, single-crystalline nature of the observed crystal of orthorhombic Ta2O5 (Fig. 3b). The regular pattern of diffraction spots reflects long-range periodicity and low defect density within the crystal lattice. The power spectrum of the 0-O2 sample exhibits similarly well-defined and symmetric diffraction spots, characteristic of a single crystal of monoclinic β-TaON. The orientation suggests preferential growth along certain crystallographic directions, and the sharpness and symmetry of the diffraction spots further confirm the high crystallinity and phase purity of synthesized β-TaON. The power spectrum of the 0-O2 sample reveals a complex pattern of discrete diffraction spots corresponding to orthorhombic Ta3N5. The indexed maxima of intensity correspond to reflections from orthorhombic Ta3N5, including the (110), (11), and (0
1) crystallographic planes (Fig. 3c). This indicates a high degree of crystallinity within the observed domain. However, compared to β-TaON, some irregularities in the diffraction spots indicate the presence of local strain or structural disorder.
Fig. 4 shows the UV-Vis diffuse reflectance spectra and Tauc plots of the as-received Ta2O5 and 0.35-O2, 0.25-O2, 0.15-O2, 0.05-O2, and 0-O2 samples synthesized under varying oxygen partial pressures (pO2) of 0.35, 0.25, 0.15, 0.05, and 0 L h−1, respectively. The as-received Ta2O5 sample exhibits minimal absorption in the visible region, with a sharp absorption edge located in the deep UV (<320 nm), consistent with its wide band gap of 4.0 eV. A progressive increase in visible light absorption and a clear red-shift of the absorption edge are observed for the samples synthesized by reducing the pO2 from 0.35 to 0.05 L h−1. This is attributed to the introduction of N 2p states, which lie at a higher energy than O 2p states, raising the valence band maximum and reducing the optical band gap in the following order: 4.0 eV (and 2.64 eV) for 0.35-O2 > 3.85 eV (and 2.75 eV) for 0.25-O2 < 2.71 eV for 0.15-O2 = 2.71 eV for 0.05-O2 > 2.09 eV for 0-O2. Notably, the 0-O2 sample composed of Ta3N5 shows the most pronounced absorption across the UV-Vis range. The background absorption beyond the absorption edge wavelength can be noticed in the U-Vis diffuse reflectance spectra of the 0.15-O2, 0.05-O2, and 0-O2 samples. This is generally attributed to the presence of defects associated with the reduced tantalum species and anion deficiency.18,45,46 The reduction in pO2 during synthesis leads to the change in powder colors. The as-received Ta2O5 and 0.35-O2, 0.25-O2, 0.15-O2, 0.05-O2, and 0-O2 samples are white, light beige, yellow ochre, olive yellow, orange ochre, and deep red, respectively. This underlying change in powder color reflects the gradual phase transformation, narrowing of the optical band gap, and the formation of defect states.
Fig. 5a shows the high-resolution Ta 4f XPS spectrum of the as-received Ta2O5. Deconvolution was performed using a Gaussian fitting model, with the shaded areas representing the fitted envelopes of the spin–orbit doublet. The XPS spectrum exhibits two prominent peaks corresponding to the Ta 4f5/2 and Ta 4f7/2 spin–orbit components, centered at approximately 28.04 eV and 26.17 eV, respectively. The observed energy separation of 1.9 eV between these two peaks is characteristic of the Ta5+ oxidation state and is consistent with previously reported values (1.9 eV).47 The high symmetry and narrow peak widths suggest a uniform oxidation environment for Ta within the oxide lattice. In Fig. 5d, the Ta 4f XPS spectrum of 0.25-O2 sample exhibits two deconvoluted peaks centered at 27.6 eV and 25.7 eV, corresponding to the Ta 4f5/2 and Ta 4f7/2 spin–orbit components of β-TaON, respectively. In Fig. 5g, the Ta 4f XPS spectrum of the 0-O2 sample reveals two distinct peaks at 26.2 eV and 24.3 eV, corresponding to the Ta 4f5/2 and Ta 4f7/2 spin–orbit components of Ta3N5, respectively. As can be noted, these peaks are slightly shifted to the lower binding energies compared to those observed in Ta2O5. This shift is primarily attributed to the difference in electronegativity between oxygen and nitrogen, with nitrogen being less electronegative. Consequently, the substitution of oxygen with nitrogen increases the electron density around the Ta atoms, resulting in a reduction in the binding energy of the Ta 4f electrons.48 The N 1s XPS spectrum of the as-received Ta2O5 (Fig. 5b) does not show any peak attributed to N 1s, indicating the absence of nitrogen. Additionally, a weak peak at ∼404.5 eV corresponds to the Ta 4p3/2 core level. The N 1s XPS spectrum of the 0.25-O2 sample, shown in Fig. 5e, indicates two distinct peaks centered at 396.2 eV and 399.4 eV. These peaks are assigned to Ta–N bonds and O–Ta–N bonding environments in β-TaON, respectively.49 A broader peak observed at 406.8 eV is attributed to the Ta 4p3/2 core level. In the N 1s XPS spectrum of the 0-O2 sample (Fig. 5h), a sharp peak centered at 396.6 eV is observed, which is assigned to the N 1s signal of Ta–N bonds in Ta3N5, confirming the successful incorporation of nitrogen. Fig. 5c presents the O 1s XPS spectrum of the as-received Ta2O5.
Upon deconvolution, three distinct peaks are identified. The main peak at ∼530.1 eV is attributed to lattice oxygen (Ta–O bonds), confirming the presence of Ta2O5. A secondary peak centered at ∼531.5 eV is associated with oxygen in the oxygen-deficient structure of the lattice and surface-adsorbed oxygen species or hydroxyl groups (–OH), commonly found on the surface of metal oxides/oxynitrides exposed to ambient air. A third, minor peak at ∼532.7 eV is assigned to physisorbed water on the surface. Similarly, the O 1s XPS spectrum of 0.25-O2 sample in Fig. 5f is deconvoluted into three components centered at 530.2 eV, 531.3 eV, and 532.7 eV, which are also associated with lattice oxygen (Ta–O), oxygen in highly defective regions/surface hydroxyl groups, and adsorbed water molecules, respectively. The intensity of the lattice oxygen peak centered at 530.2 eV in 0.25-O2 sample is slightly reduced compared to that of Ta2O5 due to the partial substitution of oxygen with nitrogen. The O 1s XPS spectrum of 0-O2 sample (Fig. 5i) is deconvoluted into three components centered at 530.2 eV, 531.6 eV, and 533.6 eV, corresponding to lattice oxygen (Ta–O), oxygen in highly defective regions/surface hydroxyl groups, and physiosorbed water, respectively. Notably, the intensities of the Ta–O and –OH related peaks at 530.2 eV and 531.6 eV are significantly reduced compared to those in Ta2O5. This trend is consistent with reported data, given that oxygen should be largely absent or present only in minor surface-related forms in Ta3N5.50
Further, this study also adopts a more sophisticated computational framework by integrating SCAN and HSE06 functionals, in contrast to earlier works relying on the generalized gradient approximation (GGA) or DFT + U methods,31,38 to more accurately predict structural, electronic, and optical properties. Fig. 6 shows the total density of states (TDOS) plots for Ta2O5, β-TaON, and Ta3N5, indicating the dependence of the number of electronic states per unit energy as a function of electronic energy. From these TDOS plots, the band gaps of Ta2O5, β-TaON, and Ta3N5 are determined to be 4.49 eV, 3.10 eV, and 2.31 eV, respectively, which is consistent with the progressive narrowing of the band gap upon nitrogen incorporation. The TDOS plots also reveal that nitrogen incorporation in Ta2O5 reduces the density of available electronic states across all energy levels. However, in the case of Ta3N5, this trend reverses, with a substantial increase in the density of states, indicating a greater availability of electronic states for transitions, which can have significant implications for optoelectronic properties. Furthermore, the TDOS plots are used to interpret electronic and optical properties, such as absorption, emission, and extinction, by providing insight into the distribution of states accessible for excitation. According to the results of spin-polarized calculations, β-TaON (Fig. 7b) and Ta3N5 (Fig. 7c) have symmetric spin-up and spin-down electron densities, confirming their non-magnetic nature. In contrast, Ta2O5 exhibits spin asymmetry in its TDOS plot (Fig. 7a) and distinct differences in energy gap widths, suggesting subtle magnetic or structural features not observed in its nitrogen-incorporated counterparts. These observations are corroborated by the integral density of states shown in Fig. 7d.
![]() | ||
Fig. 7 Spin-resolved total density of states (TDOS) plots of Ta2O5 (a), β-TaON (b), and Ta3N5 (c) and integral density of states (d). |
Fig. 8 shows the calculated band edge positions of the conduction and valence bands for Ta2O5, β-TaON, and Ta3N5, with the Fermi level indicated by dashed lines. A clear shift of the Fermi level toward the conduction band occurs from Ta2O5 to β-TaON, followed by a downward shift in Ta3N5, reflecting changes in electronic structure and carrier dynamics with increasing nitrogen content. Simultaneously, an increase is observed in key optical parameters, such as the refractive index, dielectric function, and reflection coefficient, as nitrogen content rises (Fig. S1†). The computed values for the refractive index are 2.37, 3.00, and 3.34 for Ta2O5, β-TaON, and Ta3N5, respectively. Their corresponding dielectric constants are 5.76, 7.46, and 10.42, and the calculated values of the reflection coefficient vary in the range of 0.16–0.29 (Fig. S1c†). Further results in Fig. S2† show that as the phase transformation from Ta2O5 to β-TaON and Ta3N5 proceeds, the spectral peaks of the extinction coefficient, energy loss function, and absorption coefficient shift towards lower photon energy values, indicating a reliable tendency in band gap reduction. Notably, nitrogen incorporation introduces additional absorption and extinction features in the 2–4 eV range (Fig. S2a and c†), which may enhance their photocatalytic activity by enabling more efficient utilization of visible light. The reduction in band gap energy facilitates improved light harvesting, rendering β-TaON and Ta3N5 more effective for visible-light-driven photocatalytic reactions in comparison to Ta2O5. The DFT calculations also reveal a reduction in the effective mass of charge carriers (electrons and holes) upon nitrogen incorporation. This suggests enhanced carrier mobility in β-TaON and Ta3N5, which is a critical factor in boosting photocatalytic efficiency. These findings are consistent with previous studies on related materials.51,52 Unlike the extinction and absorption behavior, energy loss spectra (Fig. S2b†) indicate that Ta2O5 exhibits higher energy loss at photon energies above 6 eV, whereas β-TaON and Ta3N5 show reduced loss, further supporting their suitability for optoelectronic and photocatalytic applications.
![]() | ||
Fig. 8 Calculated band edge positions of the conduction and valence bands for Ta2O5, β-TaON, and Ta3N5. The Fermi level is indicated by dashed lines. |
Following the structural and optical characterization, photoelectrochemical (PEC) studies were conducted to evaluate the critical influence of oxygen partial pressure on the phase evolution and their light-driven activity. The tantalum (oxy)nitrides, synthesized under decreasing oxygen partial pressures (pO2 = 0.35, 0.25, 0.15, 0.05, and 0 L h−1), exhibited a progressive transformation in composition, as confirmed by XRD: from pure orthorhombic Ta2O5 in the as-received sample to mixed phases of Ta2O5 and β-TaON at pO2 = 0.35 L h−1, and predominantly β-TaON at pO2 = 0.25 L h−1. At lower pO2 (0.15 and 0.05 L h−1), β-TaON coexisted with Ta3N5 though the latter appeared only in trace amounts at 0.15 L h−1. A full conversion to single-phase Ta3N5 was achieved under nitrogen-only conditions (0 L h−1), enabling a direct comparison of PEC performance as a function of nitridation degree.
To evaluate the PEC activity of these materials, open circuit potential (OCP) measurements were conducted under different values of irradiance. This method provided a sensitive probe of the photoinduced charge separation capabilities of the photoanodes.53 As shown in Fig. 9A, all synthesized samples exhibited a logarithmic shift of the OCP toward more negative values upon increasing light intensity, signifying the accumulation of photogenerated electrons in the semiconductor. However, it is worth noting that the as-received Ta2O5 showed a very small and constant change at high irradiance, probably due to the need for absorption of the scarce, very high-energy UV light. In all cases, this negative shift reflects the development of a chemical potential gradient for electrons directly related to the photon absorption rate and carrier dynamics.54 Notably, larger shifts in OCP under illumination are indicative of efficient charge generation and separation, with concomitantly reduced recombination rates. The magnitude of the OCP shift followed the trend: 0.05-O2 > 0.15-O2 > 0-O2 > 0.25-O2 > 0.35-O2 > as-received Ta2O5 (very small changes), which aligns with the expected PEC response for materials exhibiting solar light absorption and active band alignment. This result confirmed that all modified samples functioned as light-responsive photoanodes, with varying degrees of thermodynamic driving force for surface photoredox reactions under open-circuit conditions.
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Fig. 9 Plot of OCP vs. irradiance (A), LSV (B), and power density vs. potential (C) of as-received Ta2O3 (a) and 0.35-O2 (b), 0.25-O2 (c), 0.15-O2 (d), 0.05-O2 (e), and 0-O2 (f). |
Linear sweep voltammetry (LSV) under illumination (Fig. 9B) further differentiated the PEC response across the sample series, with the sustained photocurrent at the interface primarily attributed to the water oxidation reaction (WOR).25,27 At 1.2 V vs. RHE, the photocurrent densities were 0.762, 0.497, 0.434, 0.376, 0.077, and 0.011 μA·cm−2 for the 0.05-O2, 0.15-O2, 0-O2, 0.25-O2, 0.35-O2, and as-received Ta2O5 samples, respectively. This same hierarchy persisted over the entire potential range, again emphasizing the superior charge transfer characteristics of the samples containing both β-TaON and Ta3N5. It is again observed that the resolved PEC response of the as-received Ta2O5 is very low, approaching the response in the dark. The need to illuminate with higher-energy UV light limits the PEC response of this material. The corresponding onset potentials for photocurrent generation (defined as the potential at which significant photocurrent began) were 0.77, 0.86, 0.90, 0.91, and 1.00 V vs. RHE, for the 0.05-O2, 0.15-O2, 0-O2, 0.25-O2, and 0.35-O2 samples, respectively. These values suggest a reduction in internal resistances, such as recombination losses, in the samples synthesized at lower oxygen partial pressures, particularly those incorporating both β-TaON and Ta3N5 phases.
Power density versus potential plot (Fig. 9C) shows bell-shaped curves with maxima between 1.0 and 1.1 V vs. RHE, and this behavior aligns with that reported for other n-type semiconductors.27,28 Peak power densities were 89, 62, 46, 39, and 8 μW cm−2 for 0.05-O2, 0.15-O2, 0-O2, 0.25-O2, and 0.35-O2, respectively. The result for the as-received Ta2O5 is quite low that it is impractical for reliable sunlight-activated PEC approaches. These values corroborate that the 0.05-O2 and 0.15-O2 samples were the most effective photoanodes in terms of light-to-chemical energy conversion. Assuming ideal behavior governed by Faraday's law, at 1.0 V vs. RHE, these photoanodes were predicted to sustain hydrogen evolution rates of 2.01 μmol cm−2 s−1 and 1.35 μmol cm−2 s−1, respectively, under appropriate dual-electrode PEC conditions.
The enhanced PEC performance of the 0.05-O2 and 0.15-O2 samples may be attributed to the formation of interfaces among the β-TaON and Ta3N5 heterostructures, which could enhance charge separation and transfer due to the favorable band alignments. However, further experimental studies are required to confirm the formation and role of such heterostructures. Based on the DFT-derived electronic band positions, β-TaON possesses a valence band (VB) at 5.33 eV and a conduction band (CB) at 8.43 eV (vs. vacuum), while Ta3N5 features a VB at 4.3 eV and a CB at 6.68 eV. This type-II band alignment would favor the transfer of photo-excited electrons from the CB of β-TaON to that of Ta3N5, while holes in the VB of Ta3N5 could migrate toward the VB of β-TaON. The spatial separation of charge carriers inherent to this configuration would reduce recombination rates and increase photocurrent efficiency.55 In contrast, the 0.35-O2 sample, containing Ta2O5 and β-TaON, may also form heterostructures, but the wider bandgap and limited visible absorption of Ta2O5 likely diminished overall PEC performance.
Despite their superior performance, the best-performing photoanodes (0.05-O2 and 0.15-O2) are expected to degrade over time due to the stability issues of Ta3N5 under illumination in aqueous media.56–58 To test the possibility of improving PEC performance, potassium ferrocyanide was employed as a sacrificial electron donor (SED) in the electrolyte. The redox activity of ferrocyanide enables it to donate electrons to photogenerated holes, sustaining interfacial charge transfer, promoting electron flow toward the external circuit, and thereby mitigating the self-oxidation of the photoanode.58,59 As shown in Fig. 10, chopped CA measurements revealed a substantial increase in photocurrent under illumination in the presence of ferrocyanide. Moreover, transient responses demonstrated reduced overshoot and spike artifacts, which are typically associated with surface recombination and trap states.60 These features were particularly minimized in the 0.05-O2 sample, suggesting more effective charge separation and faster surface kinetics when ferrocyanide was employed.
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Fig. 10 CA at 1 V vs. RHE under chopped irradiation of 0.05-O2 (A and B) and 0.15-O2 (C and D) samples: 0.1 M Na2SO4 (A and C) and 0.1 M Na2SO4 + 5 mM potassium ferrocyanide (B and D). |
The formation of β-TaON/Ta3N5 composite under optimized ammonolysis conditions provided significant enhancements in the PEC response, both thermodynamically (via OCP shift) and kinetically (via improvement of photocurrent and power density). The band alignment and phase composition define the PEC behavior, highlighting the synergistic effect of combining solar-light-absorbing and structurally robust materials. Furthermore, the use of ferrocyanide as SED provided a valuable strategy for testing improvements in charge transfer properties while reducing secondary reactions. These findings underscore the promise of tailored oxynitride/nitride heterostructures for solar fuel applications as photoanodes.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d5dt01193k |
This journal is © The Royal Society of Chemistry 2025 |