Themed collection Editor’s Choice: van der Waals heterostructures
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Plasmonics with two-dimensional semiconductors: from basic research to technological applications
Herein, we discuss the features, applications, open challenges and prospects of plasmonics with various classes of two-dimensional semiconductors “beyond graphene”.
Nanoscale, 2018,10, 8938-8946
https://doi.org/10.1039/C8NR01395K
Recent progress in van der Waals heterojunctions
Promising vdW assembly constructed with exactly hierarchical structures.
Nanoscale, 2017,9, 4324-4365
https://doi.org/10.1039/C7NR00844A
Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure
The parameters of the MoS2/MoTe2 van der Waals tunnel diode are optimized to obtain a peak-to-valley current ratio of 4.8.
Nanoscale, 2018,10, 12322-12329
https://doi.org/10.1039/C8NR01711E
Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators
We have realized the first MoS2-graphene heterostructure nanomechanical resonators with varying thickness and size. Comparing experimental results and theoretical calculations, we have quantified the tension levels in these heterostructure 2D resonators.
Nanoscale, 2017,9, 18208-18215
https://doi.org/10.1039/C7NR04940D
Enhanced photocatalytic hydrogen evolution from in situ formation of few-layered MoS2/CdS nanosheet-based van der Waals heterostructures
A highly efficient H2 evolution photocatalyst system of few-layered MoS2/CdS nanosheet-based van der Waals heterostructures has been fabricated through a facile bubble exfoliation strategy.
Nanoscale, 2017,9, 6638-6642
https://doi.org/10.1039/C7NR01705G
Significantly enhanced magnetoresistance in monolayer WTe2via heterojunction engineering: a first-principles study
The large non-saturating magnetoresistance (MR) of bulk WTe2 is greatly reduced in thin films, and vdW heterojunction engineering can significantly enhance the MR effect.
Nanoscale, 2018,10, 22231-22236
https://doi.org/10.1039/C8NR04391D
Onset of vertical bonds in new GaN multilayers: beyond van der Waals solids
New, thermodynamically stable allotropes of bilayer GaN are revealed.
Nanoscale, 2018,10, 21842-21850
https://doi.org/10.1039/C8NR05626A
The impact of substrate surface defects on the properties of two-dimensional van der Waals heterostructures
The effects of atomic and structural defects on the interlayer properties or configuration in the van der Waals heterostructures have been thoroughly investigated using WS2 flakes directly grown on graphene.
Nanoscale, 2018,10, 19212-19219
https://doi.org/10.1039/C8NR03777A
Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism
The critical role of de-charge transfer in tuning the band gap of layered 2D materials.
Nanoscale, 2018,10, 16759-16764
https://doi.org/10.1039/C8NR04660C
Tunable photoluminescence in a van der Waals heterojunction built from a MoS2 monolayer and a PTCDA organic semiconductor
We observe synergistic photoluminescence of MoS2/PTCDA vdW heterostructure due to the interface interaction and improved crystal of PTCDA layer.
Nanoscale, 2018,10, 16107-16115
https://doi.org/10.1039/C8NR03334J
Tunable WSe2–CdS mixed-dimensional van der Waals heterojunction with a piezo-phototronic effect for an enhanced flexible photodetector
A strain-tunable WSe2–CdS mixed-dimensional vdWs heterointerface is demonstrated and the photoresponse is dramatically enhanced with the piezo-phototronic effect.
Nanoscale, 2018,10, 14472-14479
https://doi.org/10.1039/C8NR04376K
Coherent control of thermal phonon transport in van der Waals superlattices
Coherent manipulation of thermal phonon transport in vdW superlattices can expand the property space beyond that occupied by natural materials.
Nanoscale, 2018,10, 14432-14440
https://doi.org/10.1039/C8NR02150C
Acoustically enhanced photodetection by a black phosphorus–MoS2 van der Waals heterojunction p–n diode
We developed a new way to enhance the photoresponsivity of a van der Waals heterojunction p–n diode using surface acoustic waves (SAWs).
Nanoscale, 2018,10, 10148-10153
https://doi.org/10.1039/C8NR02022A
Electrically driven lasers from van der Waals heterostructures
Single ZnO microwire electrically driven lasers are realized from van der Waals heterostructures.
Nanoscale, 2018,10, 9602-9607
https://doi.org/10.1039/C8NR01037D
Simultaneous assembly of van der Waals heterostructures into multiple nanodevices
We present a fast and scalable method for the simultaneous fabrication of multiple nanodevices based on liquid-phase exfoliated van der Waals heterostructures.
Nanoscale, 2018,10, 7966-7970
https://doi.org/10.1039/C8NR01045E
Strain engineering of van der Waals heterostructures
An unexpected long-range strain persists in 2D-bonded Bi2Te3–Sb2Te3 heterostructures.
Nanoscale, 2018,10, 1474-1480
https://doi.org/10.1039/C7NR07607J
TiS3 sheet based van der Waals heterostructures with a tunable Schottky barrier
First-principles calculations suggest that the TiS3 monolayer has the potential for device applications as a channel material contacting with graphene or other 2D metallic materials to form heterojunctions.
Nanoscale, 2018,10, 807-815
https://doi.org/10.1039/C7NR05606K
h-BN/graphene van der Waals vertical heterostructure: a fully spin-polarized photocurrent generator
A new scheme for generating perfect spin-polarized quantum transport in zigzag-edged graphene nanoribbons is demonstrated by light irradiation on a h-BN/graphene/h-BN van der Waals (vdW) heterostructure.
Nanoscale, 2018,10, 174-183
https://doi.org/10.1039/C7NR06159E
Gas molecule sensing of van der Waals tunnel field effect transistors
Utilizing van der Waals heterostructure gas sensors, we measure the rectification behavior of the sensitivity signal and devise a fingerprint map of the sensitivity variation in a mixture condition of two different gas molecules.
Nanoscale, 2017,9, 18644-18650
https://doi.org/10.1039/C7NR05712A
Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure
Enhancement of hole mobility in InSe monolayer by forming an InSe/BP vdW heterostructure with type-II band alignment.
Nanoscale, 2017,9, 14682-14689
https://doi.org/10.1039/C7NR02725G
van der Waals epitaxial two-dimensional CdSxSe(1−x) semiconductor alloys with tunable-composition and application to flexible optoelectronics
2D non-layered CdSxSe(1−x) alloys with a tunable composition have been synthesized by incommensurate VDWs epitaxy and possess huge application potential in next-generation optoelectronics.
Nanoscale, 2017,9, 13786-13793
https://doi.org/10.1039/C7NR04968D
Rotational superstructure in van der Waals heterostructure of self-assembled C60 monolayer on the WSe2 surface
Hybrid van der Waals (vdW) heterostructures composed of two-dimensional (2D) layered materials and self-assembled organic molecules are promising systems for electronic and optoelectronic applications with enhanced properties and performance.
Nanoscale, 2017,9, 13245-13256
https://doi.org/10.1039/C7NR03951D
Superlubricity of a graphene/MoS2 heterostructure: a combined experimental and DFT study
The relationship between a low interlayer lateral force constant and ultrasmall potential energy corrugation in a graphene/MoS2 heterostructure provides another viewpoint to the origin of superlubricity.
Nanoscale, 2017,9, 10846-10853
https://doi.org/10.1039/C7NR01451A
Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions
The vertically stacked MoTe2/MoS2 p–n heterojunctions have excellent electronic and optoelectronic characteristics with a type-II band alignment.
Nanoscale, 2017,9, 10733-10740
https://doi.org/10.1039/C7NR03445H
The magnetic proximity effect and electrical field tunable valley degeneracy in MoS2/EuS van der Waals heterojunctions
Valley degeneracy is lifted by the magnetic proximity effect in MoS2/EuS vdW heterojunctions and controlled by the electrical field.
Nanoscale, 2017,9, 9502-9509
https://doi.org/10.1039/C7NR03317F
Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures
A new family of phosphorene-based semiconductor van der Waals heterostructures with layer-dependent electronic properties was yielded by first-principles calculations.
Nanoscale, 2017,9, 8616-8622
https://doi.org/10.1039/C7NR01952A
Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions
We investigated electrical and photoelectrical properties of graphene sandwiched WSe2/GaSe van der Waals heterojunctions. The heterojunctions not only can be effectively tunable by back gate, but also show excellent photoresponse such as fast response time down to ∼30 μs.
Nanoscale, 2017,9, 8388-8392
https://doi.org/10.1039/C7NR03124F
Configuration-dependent anti-ambipolar van der Waals p–n heterostructures based on pentacene single crystal and MoS2
Configuration-dependent electronic properties of MoS2/pentacene van der Waals p–n heterostructures imply a space charge zone within the heterostructure.
Nanoscale, 2017,9, 7519-7525
https://doi.org/10.1039/C7NR01822C
About this collection
Professor Paolo Samorì (Université de Strasbourg, France), Nanoscale Associate Editor, introduces his Editor’s Choice collection.
"Two-dimensional materials display a broad range of physical and chemical properties including electronic, optical, thermal and magnetic properties, which result from their crystal structure and chemical composition. Such a range of properties can be leveraged by mechanically superimposing these 2D materials into vertically-stacked structures in which the various layers are held together via weak interplanar van der Waals interactions – forming the so-called van der Waals heterostructures. Such hybrid architectures are ideal platforms to tailor novel materials with on-demand properties and to demonstrate novel device architectures. This online collection provides a highlight of some among the most enlightening results on van der Waals heterostructures, by providing evidence for their outstanding potential for tuning the properties of 2D materials for technological applications based on devices exhibiting extraordinary performance."