Issue 21, 2023

Organic–inorganic hybrid perovskite materials and their application in transistors

Abstract

The emerging hybrid organic–inorganic perovskites (HOIPs) have attracted significant attention owing to their versatile and tunable structures and properties. Employing organic cations, HOIPs can integrate the advantages of both organic and inorganic components. To date, HOIPs have been widely investigated in various fields, including photovoltaics, light-emitting devices, and field-effect transistor (FETs). HOIPs possess characteristics similar to conventional inorganic semiconductors, such as high charge carrier mobility and long diffusion length. Moreover, the capacity of solution processing ensures the facile fabrication of devices. Those advantages make HOIP materials a promising candidate for semiconductors in FETs. The first HOIP-based FET was reported in 1999, which was ten years earlier than the first HOIP-based solar cell. However, currently, reports on perovskite FETs are relatively rare, possibly due to the environment-dependent apparent mobilities, instability, and hysteresis caused by the intrinsic properties of perovskites. In this review, we aim to summarize the strategies developed by the pioneering works to improve the performances of HOIP-based FETs. We begin by providing a brief introduction to structure, properties, and versatile fabrication methods. Afterward, reports on HOIP-based FETs are reviewed. FETs were divided into ambipolar, p-type, n-type, and functional portions, and the potential applications of HOIPs in FETs are highlighted, which aim at being instructive for future investigations.

Graphical abstract: Organic–inorganic hybrid perovskite materials and their application in transistors

Article information

Article type
Review Article
Submitted
22 jun 2023
Accepted
19 jul 2023
First published
19 jul 2023

Mater. Chem. Front., 2023,7, 5215-5246

Organic–inorganic hybrid perovskite materials and their application in transistors

Y. Liu, Y. Liu and Y. Guo, Mater. Chem. Front., 2023, 7, 5215 DOI: 10.1039/D3QM00697B

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