Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe2 field-effect transistors

Mudasser Husain, Younas Ahmed, Xingyue Yang, Shibo Fang, Zongmeng Yang, Jichao Dong, Linqiang Xu, Nasir Rahman and Jing Lu

J. Mater. Chem. C, 2025, 13, 16440
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Promising ultra-short channel transistors based on OM2S (M = Ga, In) monolayers for high performance and low power consumption

Xueping Li, Peize Yuan, Lin Li, Ting Liu, Chenhai Shen, Yurong Jiang, Xiaohui Song, Jingbo Li and Congxin Xia

Nanoscale, 2023, 15, 356
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Improving performance of monolayer arsenene tunnel field-effect transistors by defects

Shun Song, Jian Gong, Hongyu Wen and Shenyuan Yang

Nanoscale Adv., 2022, 4, 3023
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Phase transition and topological transistors based on monolayer Na3Bi nanoribbons

Bowen Shi, Hao Tang, Zhigang Song, Jingzhen Li, Lianqiang Xu, Shiqi Liu, Jie Yang, Xiaotian Sun, Ruge Quhe, Jinbo Yang and Jing Lu

Nanoscale, 2021, 13, 15048
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Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

Baisheng Sa, Xiaotian Shen, Shuchang Cai, Zhou Cui, Rui Xiong, Chao Xu, Cuilian Wen and Bo Wu

Phys. Chem. Chem. Phys., 2022, 24, 15376
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Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Lin Xu, Jie Yang, Chenguang Qiu, Shiqi Liu, Weijun Zhou, Qiuhui Li, Bowen Shi, Jiachen Ma, Chen Yang, Jing Lu and Zhiyong Zhang

ACS Appl. Mater. Interfaces, 2021, 13, 31957
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Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation

Shiqi Liu, Qiuhui Li, Chen Yang, Jie Yang, Lin Xu, Linqiang Xu, Jiachen Ma, Ying Li, Shibo Fang, Baochun Wu, Jichao Dong, Jinbo Yang and Jing Lu

Phys. Rev. Applied, 2022, 18
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High‐Performance Monolayer SiMe‐Graphene n‐Type Field‐Effect Transistors with Low Supply Voltage and High On‐State Current in Sub‐5 nm Gate Length

Wenkai Zhao, Dongqing Zou, Zhaopeng Sun, Yuqing Xu, Guomin Ji, Xiaoteng Li and Chuanlu Yang

Adv Elect Materials, 2022, 8
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Integration of High-Performance FETs and Sensitive Gas Sensors Using Janus WSiGeP4 for Trace Toxic Gas Detection

Mi-Mi Dong, Xiao-Xiao Fu, Chuan-Kui Wang and Ming-Wen Zhao

J. Phys. Chem. Lett., 2025, 16, 3856
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Polarization-enhanced sub-5 nm Janus MoSiGeN4 FET for high-performance and low-power applications

Mi-Mi Dong, Chuan-Kui Wang, Xiao-Xiao Fu and Ming-Wen Zhao

Journal of Materials Science & Technology, 2026, 255, 47
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Ab initio quantum transport simulations of the sub-5 nm gate-length two-dimensional β-CuI transistors for advanced nanoelectronics

Mudasser Husain, Younas Ahmed, Xingyue Yang, Zongmeng Yang, Jiahui Li, Jichao Dong, Linqiang Xu, Nasir Rahman, Shibo Fang and Jing Lu

Materials Today Nano, 2026, 33, 100774
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Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Abdelaziz Lazzaz, Khaled Bousbahi and Mustapha Ghamnia

Facta Univ Electron Energ, 2023, 36, 1
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Sub-10 nm two-dimensional transistors: Theory and experiment

Ruge Quhe, Lin Xu, Shiqi Liu, Chen Yang, Yangyang Wang, Hong Li, Jie Yang, Qiuhui Li, Bowen Shi, Ying Li, Yuanyuan Pan, Xiaotian Sun, Jingzhen Li, Mouyi Weng, Han Zhang, Ying Guo, Linqiang Xu, Hao Tang, Jichao Dong, Jinbo Yang, Zhiyong Zhang, Ming Lei, Feng Pan and Jing Lu

Physics Reports, 2021, 938, 1
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Sub-5-nm Monolayer GaSe MOSFET with Ultralow Subthreshold Swing and High On -State Current: Dielectric Layer Effects

Xueping Li, Peize Yuan, Lin Li, Mengjie He, Jingbo Li and Congxin Xia

Phys. Rev. Applied, 2022, 18
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Quantum transport simulations of sub-5 nm bilayer Ga2O3 transistor for high-performance applications

Penghui Li, Linpeng Dong, Bo Peng, Kai Nan and Weiguo Liu

J. Phys.: Condens. Matter, 2024, 36, 035301
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Scaling behavior of ultrathin gate-all-around InSb nanowire transistors

Mughira Ghafoor, Salah Ud Din, Sufaid Shah, Matin Ashurov, Quihui Li and Jing Lu

J Mater Sci, 2026, 61, 1021
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Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects

Shun Song, Lu Qin, Zhi Wang, Juan Lyu, Jian Gong and Shenyuan Yang

Nanomaterials, 2024, 14, 1960
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Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics

Bo-Jhih Chou, Yu-Cheng Chang, Wen-Hao Chang and Chao-Hsin Chen

IEEE J. Electron Devices Soc., 2022, 10, 1033
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SRAM Design and Analysis Using TIGFET

S. Nagaleela and V. Balamurugan

Eng. Technol. Appl. Sci. Res., 2026, 16, 31188
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Impacts of X-ray energy and beam size on CD-SAXS measurement precision

Xu-Yang Qin, Bing Guo, Nan Pan, Xin-Hao Gao, Shu-Min Yang, Chun-Xia Hong, Ying Wang, Xiu-Hong Li, Chun-Ming Yang and Feng-Gang Bian

NUCL SCI TECH, 2026, 37
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HF-QSRAM: Half-Select Free Quaternary SRAM Design with Required Peripheral Circuits for IoT/IoVT Applications

Arsalan Ghasemian, Ebrahim Abiri, Kourosh Hassanli and Abdolreza Darabi

ECS J. Solid State Sci. Technol., 2022, 11, 011002
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