Issue 12, 2024

Wafer scale growth of single crystal two-dimensional van der Waals materials

Abstract

Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.

Graphical abstract: Wafer scale growth of single crystal two-dimensional van der Waals materials

Article information

Article type
Minireview
Submitted
31 dec 2023
Accepted
22 feb 2024
First published
22 feb 2024

Nanoscale, 2024,16, 5941-5959

Wafer scale growth of single crystal two-dimensional van der Waals materials

C. Gautam, B. Thakurta, M. Pal, A. K. Ghosh and A. Giri, Nanoscale, 2024, 16, 5941 DOI: 10.1039/D3NR06678A

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