Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

Abstract

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al₂O₃ films deposited on intrinsic silicon with a native SiO₂ layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.