Issue 9, 2023

Liquid phase epitaxy of CuGaO2 on GaN: P–N heterostructure for photocatalytic water splitting

Abstract

Semiconductor photocatalytic water splitting is a promising method to address the worldwide energy issues. Fast carrier recombination and the limited visible-light absorption are two main challenges to be overcome, and designing p–n heterojunctions is an effective solution. In this study, two direct band gap semiconductors are selected to form a p–n heterojunction. The results show that liquid phase epitaxy of a thick film p-type CuGaO2 on an n-type GaN substrate is effective for the splitting of water into hydrogen and oxygen.

Graphical abstract: Liquid phase epitaxy of CuGaO2 on GaN: P–N heterostructure for photocatalytic water splitting

Supplementary files

Article information

Article type
Paper
Submitted
23 máj 2023
Accepted
08 aug 2023
First published
08 aug 2023
This article is Open Access
Creative Commons BY-NC license

Energy Adv., 2023,2, 1495-1499

Liquid phase epitaxy of CuGaO2 on GaN: P–N heterostructure for photocatalytic water splitting

H. Sena, S. Kitano, H. Habazaki and M. Fuji, Energy Adv., 2023, 2, 1495 DOI: 10.1039/D3YA00226H

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