Issue 11, 2023

Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Abstract

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed.

Graphical abstract: Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Supplementary files

Article information

Article type
Communication
Submitted
26 jan 2023
Accepted
26 sep 2023
First published
26 sep 2023
This article is Open Access
Creative Commons BY license

Energy Adv., 2023,2, 1818-1822

Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

A. Walter, B. A. Kamino, S. Moon, P. Wyss, J. J. Diaz Leon, C. Allebé, A. Descoeudres, S. Nicolay, C. Ballif, Q. Jeangros and A. Ingenito, Energy Adv., 2023, 2, 1818 DOI: 10.1039/D3YA00048F

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements