Issue 15, 2021

Controlled growth of 2D ultrathin Ga2O3 crystals on liquid metal

Abstract

2D metal oxides (2DMOs) have drawn intensive interest in the past few years owing to their rich surface chemistry and unique electronic structures. Striving for large-scale and high-quality novel 2DMOs is of great significance for developing future nano-enabled technologies. In this work, we demonstrate for the first time controllable growth of highly crystalline 2D ultrathin Ga2O3 single crystals on liquid Ga by the chemical vapor deposition approach. With the introduction of oxygen into the growth process, large-area hexagonal α-Ga2O3 crystals with a uniform size distribution have been produced. At high temperature, fast diffusion of oxygen atoms onto the liquid surface facilitates reaction with Ga and thus leads to in situ formation of 2D ultrathin crystals. By precisely controlling the amount of oxygen, the vertical growth of the Ga2O3 single crystal has been realized. Furthermore, phase engineering can be achieved and thus 2D β-Ga2O3 crystals were also prepared by precisely tuning the growth temperature. The controlled growth of 2D Ga2O3 crystals offers an applicable avenue for fabrication of other 2D metal oxides and can further open up possibilities for future electronics.

Graphical abstract: Controlled growth of 2D ultrathin Ga2O3 crystals on liquid metal

Supplementary files

Article information

Article type
Communication
Submitted
21 máj 2021
Accepted
15 jún 2021
First published
15 jún 2021
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2021,3, 4411-4415

Controlled growth of 2D ultrathin Ga2O3 crystals on liquid metal

M. Li, L. Li, Y. Fan, L. Huang, D. Geng and W. Yang, Nanoscale Adv., 2021, 3, 4411 DOI: 10.1039/D1NA00375E

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