Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

Abstract

We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that the low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs.