Issue 29, 2018

Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

Abstract

The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3(EnBu2)3] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films with very good compositional, structural and morphological control, for the first time. X-ray diffraction data follow Vegard's law and Raman bands shift linearly with the atom substitutions, indicating very well-distributed solid solutions.

Graphical abstract: Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

Supplementary files

Article information

Article type
Communication
Submitted
16 mar 2018
Accepted
04 jún 2018
First published
12 júl 2018
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2018,6, 7734-7739

Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition

S. L. Benjamin, C. H. (. de Groot, C. Gurnani, S. L. Hawken, A. L. Hector, R. Huang, M. Jura, W. Levason, E. Reid, G. Reid, S. P. Richards and G. B. G. Stenning, J. Mater. Chem. C, 2018, 6, 7734 DOI: 10.1039/C8TC01285G

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