Issue 17, 2015
From the journal:

Journal of Materials Chemistry A

High-performance hole-transporting layer-free conventional perovskite/fullerene heterojunction thin-film solar cells†

Kai-Wei Tsai,ab   Chu-Chen Chueh,a   Spencer T. Williams,a   Ten-Chin Wenb  and  Alex K. Y. Jen*a  

* Corresponding authors

a Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120, USA
E-mail: ajen@u.washington.edu

b Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan

Abstract

A high-performance hole-transporting layer (HTL)-free conventional perovskite/fullerene heterojunction thin-film PVSC was demonstrated. We revealed that perovskite can modify the work function of ITO, leading to sufficient charge extraction efficiency at the ITO/perovskite interface. Combined with the high conductivity of ITO, a PCE of >11% with a high open-circuit voltage (Voc) of 1.01 V was achieved.

Graphical abstract: High-performance hole-transporting layer-free conventional perovskite/fullerene heterojunction thin-film solar cells

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Article information

DOI
https://doi.org/10.1039/C5TA01343G
Article type
Communication
Submitted
18 feb 2015
Accepted
10 mar 2015
First published
13 mar 2015

J. Mater. Chem. A, 2015,3, 9128-9132

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High-performance hole-transporting layer-free conventional perovskite/fullerene heterojunction thin-film solar cells

K. Tsai, C. Chueh, S. T. Williams, T. Wen and A. K. Y. Jen, J. Mater. Chem. A, 2015, 3, 9128 DOI: 10.1039/C5TA01343G

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