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Abstract | Cited by

An antiferroelectric Mo/Hf0.3Zr0.7O2/SIOx/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO2 layer, and the endurance could be enhanced beyond 109 cycles, which is higher than that of the gate stack of ferroelectric field-effect-transistors by 3–4 orders of magnitude.

Graphical abstract: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

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