Issue 10, 2023

Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

Abstract

Doped 2D transition metal dichalcogenides have attracted much attention as room-temperature ferromagnetism can be realized in such semiconductors. For example, the magnetism of vanadium-doped WS2 (V-WS2) has been revealed, but there is still confusion about how the substituted vanadium atoms affect the carrier scattering of V-WS2. Here, we study the electron–phonon coupling and carrier scattering of V-WS2 by temperature-dependent Raman spectroscopy and electrical transport measurements. We identify a characteristic Raman peak at ∼212 cm−1, a fingerprint for V-WS2. We also reveal that the electron–phonon coupling is strengthened in V-WS2 and becomes more sensitive to temperature, which suppresses the carrier mobility and improves the sensitivity of its electronic performance to temperature. Moreover, the substituted vanadium not only causes an n- to p-type transition of the carrier transport behavior but also serves as charged impurities, making ionization scattering dominate the carrier transport process in V-WS2. Such modulation of carrier transport behavior in V-WS2 will facilitate its application in electronic and spintronic devices.

Graphical abstract: Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

Supplementary files

Article information

Article type
Research Article
Submitted
27 окт 2022
Accepted
27 фев 2023
First published
28 фев 2023

Mater. Chem. Front., 2023,7, 2059-2067

Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

J. Zou, Y. Xu, X. Miao, H. Chen, R. Zhang, J. Tan, L. Tang, Z. Cai, C. Zhang, L. Kang, X. Zhang, C. Ma, H. Cheng and B. Liu, Mater. Chem. Front., 2023, 7, 2059 DOI: 10.1039/D2QM01108E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements