Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density

Abstract

In recent years, nanotechnology and materials science have evolved and matured, making it increasingly easier to design and fabricate next-generation 3D microelectronics. The process has changed drastically from traditional 2D microelectronics, resulting in improved performance, higher integration density, and new functionalities. As applications become more complex and power-intensive, this technology can address the demands of high-performance computing, advanced sensors, and cutting-edge communication systems via wearable, flexible devices, etc. To manufacture higher-density microelectronics, recent advances in the fabrication of such 3D devices are discussed. Furthermore, the paper stresses the importance of novel materials and architectures, such as monolithic 3D integration and heterogeneous integration, in overcoming these challenges. We emphasize the importance of addressing complex issues to achieve better performance and higher integration density, which will play an important role in shaping the next generation of microelectronic devices. The multifaceted challenges involved in developing next-generation 3D microelectronic devices are also highlighted.

Graphical abstract: Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density

Article information

Article type
Review Article
Submitted
14 июл 2024
Accepted
29 июл 2024
First published
26 сен 2024
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2024, Advance Article

Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density

N. Singh, K. Srivastava, A. Kumar, N. Yadav, A. Yadav, S. Dubey, R. Singh, A. Gehlot, A. S. Verma, N. Gupta, T. Kumar, Y. Wu, Z. Hongyu, A. Mondal, K. Pandey, R. Brajpuriya, S. Kumar and R. Gupta, Nanoscale Adv., 2024, Advance Article , DOI: 10.1039/D4NA00578C

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