Bismuth selenide topological insulator materials for green energy devices: prospects and applications

Abstract

Bismuth selenide topological insulator material has emerged as a prototype three-dimensional topological insulator and has been the center of attention for a new generation of related devices. Theoretical and experimental characterization of the underlying physical phenomena, together with proper evaluation of the current picture, is essential to envision, design, and engineer Bi₂Se₃ for the realization of important device applications. Furthermore, the presented characterization methodologies can be adopted for similar three-dimensional topological insulator counterpart materials, such as bismuth telluride and antimony selenide. Herein, we summarize recent research advancements on bismuth selenide, both theoretically and experimentally, and provide a perspective for future applications in spintronic and quantum computing devices as well as other green-energy-based scientific endeavors. Different synthesis methods, physical properties, the occurrence of quantum mechanical phenomena and their methods of calculation, device applications and characterization methods that have been implemented for bismuth selenide are classified and comprehensively reviewed. Future prospects addressing the challenges and opportunities are also highlighted.