Issue 23, 2017

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

Abstract

Chemical vapor deposition (CVD) is one of the technology platforms forming the backbone of the semiconductor industry and is vital in the production of electronic devices. To upscale a CVD process from the lab to the fab, large-area uniformity and high run-to-run reproducibility are needed. We show by a combination of experiments and gas phase kinetics modeling that the combinations of Si and C precursors with the most well-matched gas phase chemistry kinetics gives the largest area of homoepitaxial growth of SiC. Comparing CH4, C2H4 and C3H8 as carbon precursors to the SiF4 silicon precursor, CH4 with the slowest kinetics renders the most robust CVD chemistry with large-area epitaxial growth and low-temperature sensitivity. We further show by quantum chemical modeling how the surface chemistry is impeded by the presence of F in the system, which limits the amount of available surface sites for the C to adsorb onto.

Graphical abstract: Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

Supplementary files

Article information

Article type
Paper
Submitted
10 jan 2017
Accepted
10 mai 2017
First published
10 mai 2017
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2017,5, 5818-5823

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

P. Stenberg, Ö. Danielsson, E. Erdtman, P. Sukkaew, L. Ojamäe, E. Janzén and H. Pedersen, J. Mater. Chem. C, 2017, 5, 5818 DOI: 10.1039/C7TC00138J

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