Issue 3, 2017

Surface engineering to achieve organic ternary memory with a high device yield and improved performance

Abstract

Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.

Graphical abstract: Surface engineering to achieve organic ternary memory with a high device yield and improved performance

Supplementary files

Article information

Article type
Edge Article
Submitted
06 set 2016
Accepted
15 dez 2016
First published
15 dez 2016
This article is Open Access

All publication charges for this article have been paid for by the Royal Society of Chemistry
Creative Commons BY license

Chem. Sci., 2017,8, 2344-2351

Surface engineering to achieve organic ternary memory with a high device yield and improved performance

X. Hou, X. Xiao, Q. Zhou, X. Cheng, J. He, Q. Xu, H. Li, N. Li, D. Chen and J. Lu, Chem. Sci., 2017, 8, 2344 DOI: 10.1039/C6SC03986C

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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