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Passivating defects in ZnO electron transport layer for enhancing performance of red InP-based quantum dot light-emitting diodes

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High‐Efficiency and Stable Green InP‐QLED Enabled by Lowering Electron Injection Barrier

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Advanced Optical Materials, 2025, 13
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Electronic Structure and Excited State Dynamics of Cadmium Chalcogenide Nanorods

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Stable and Efficient Red InP-Based QLEDs through Surface Passivation Strategies of Quantum Dots

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Cd-Free Quantum-Dot Light-Emitting Diodes through Nanometer-Thick ZnS/ZnMgO Double-Electron Transport Layers

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Eco-friendly quantum-dot light-emitting diode display technologies: prospects and challenges

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Dynamic Electroluminescence Modulation in Perovskites under AC Electric Field: A Review

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Efficient green InP-based QD-LED by controlling electron injection and leakage

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Synergistic Chloride Passivation and Inorganic Shell Confinement in ZnMgO Nanoparticles for Efficient and Stable Blue ZnSeTe QLEDs

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Efficient InP Green Quantum‐Dot Light‐Emitting Diodes Based on Organic Electron Transport Layer

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Improving Performance of InP-Based Quantum Dot Light-Emitting Diodes by Controlling Defect States of the ZnO Electron Transport Layer

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Solution-Processed Thick Hole-Transport Layer for Reliable Quantum-Dot Light-Emitting Diodes Based on an Alternatingly Doped Structure

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Enhancing the performance of blue quantum-dot light-emitting diodes by optimized electron transport layer via phosphate-oxygen group

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Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces

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Perovskite/organic tandem device to realize light detection and emission dual function

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Decoupling the Trade‐Off Between the Photosignal and Photonoise in Upconversion Devices Through a Solution‐Processed Nickel Oxide Interconnecting Layer

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Advanced Optical Materials, 2024, 12
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A comprehensive review on the lifetime of cadmium-free quantum-dot light-emitting diodes

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Recent Progress in Quantum Dot Light‐Emitting Diodes: Degradation Mechanisms and Strategies for Improving Device Stability and Reliability

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Adv Elect Materials, 2025, 11
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Quantum Dot Light-Emitting Diodes with External Quantum Efficiency Exceeding 30% Enabled by a Crown Ether-Modified Electron Transport Layer

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Overcoming challenges in InP-based quantum dots: from nucleation mechanisms to high-performance quantum dot light-emitting diodes

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Engineering Electron Transport Layer with Ionic Liquid for High-Performance Quantum Dot Light-Emitting Diodes

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Efficient, Stable Blue Light‐Emitting Diodes Enabled by Heterostructural Alteration of ZnSeTe Quantum Dot and Functionalization of ZnMgO

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Advanced Optical Materials, 2024, 12
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Balancing Charge Injection for Enhanced Efficiency in Inverted InP Quantum Dot Light‐Emitting Diodes

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Improved Efficiency and Operational Lifetime in InP-Based Quantum-Dot Light-Emitting Diodes Using a ZnO:ZnS Nanocomposite Electron Transport Layer

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Investigation of operation and degradation mechanisms in ZnTeSe blue quantum-dot light-emitting diodes by identifying recombination zone

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Bridging Chloride Anions Enables Efficient and Stable InP Green Quantum‐Dot Light‐Emitting Diodes

Qianqian Wu, Lin Wang, Fan Cao, Sheng Wang, Lufa Li, Guohua Jia and Xuyong Yang

Advanced Optical Materials, 2023, 11
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Advancements in Eco‐Friendly Colloidal Quantum Dots and their Application in Light Emitting Diodes: Achieving Bright and Color‐Pure Emission for Displays

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Improving Perovskite Green Quantum Dot Light-Emitting Diode Performance by Hole Interface Buffer Layers

Qiangqiang Wang, Xuanyu Zhang, Lei Qian and Chaoyu Xiang

ACS Appl. Mater. Interfaces, 2023, 15, 28833
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Effect of Excess Carriers on the Degradation of InP-Based Quantum-Dot Light-Emitting Diodes

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ACS Appl. Electron. Mater., 2022, 4, 6229
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Enhancing performance of blue ZnTeSe-based quantum dot light-emitting diodes through dual dipole layers engineering

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Applied Physics Letters, 2023, 123
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Utilizing VO2 as a Hole Injection Layer for Efficient Charge Injection in Quantum Dot Light-Emitting Diodes Enables High Device Performance

Han Bin Cho, Ju Yeon Han, Ha Jun Kim, Noolu Srinivasa Manikanta Viswanath, Yong Min Park, Jeong Wan Min, Sung Woo Jang, Heesun Yang and Won Bin Im

ACS Appl. Mater. Interfaces, 2023, 15, 29259
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