Issue 11, 2023

Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Abstract

Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray irradiation (CuKα line, 8.05 keV) for the first time. Photoresponse linearity at low dose-rates (varying in the 10–200 μGy s−1 range), and excellent detection sensitivity (up to 342.3 μC Gy−1 cm−3), were demonstrated even at very low applied electric fields (down to 0.001 V μm−1). Photocurrent rise time was evaluated to be <0.5 s, and signal stability was assessed for exposure times up to 2 h, highlighting no degradation of the performance. These encouraging results, mostly due to the extremely low dark current measured (in the pA range), suggest that orthorhombic undoped κ-Ga2O3 is a promising material for the fabrication of sensitive and stable large-area X-ray detectors with minimum power consumption.

Graphical abstract: Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Supplementary files

Article information

Article type
Paper
Submitted
12 dez 2022
Accepted
28 fev 2023
First published
28 fev 2023
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2023,11, 3759-3769

Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

M. Girolami, M. Bosi, V. Serpente, M. Mastellone, L. Seravalli, S. Pettinato, S. Salvatori, D. M. Trucchi and R. Fornari, J. Mater. Chem. C, 2023, 11, 3759 DOI: 10.1039/D2TC05297K

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