Issue 47, 2021

Memristor modeling: challenges in theories, simulations, and device variability

Abstract

This article presents a review of the current development and challenges in memristor modeling. We review the mechanisms of memristive devices based on various classifications and survey the progress of memristive models and simulations. Besides the classical theoretical models, different modeling architectures are compared, including first-principles, modular dynamics and finite element tools such as COMSOL and MATLAB. The challenges and strategies for memristors with non-ideal mechanisms, including large parameter variations, modeling algorithms and simulation roadblocks are also discussed.

Graphical abstract: Memristor modeling: challenges in theories, simulations, and device variability

Article information

Article type
Review Article
Submitted
04 set 2021
Accepted
03 nov 2021
First published
09 nov 2021

J. Mater. Chem. C, 2021,9, 16859-16884

Memristor modeling: challenges in theories, simulations, and device variability

L. Gao, Q. Ren, J. Sun, S. Han and Y. Zhou, J. Mater. Chem. C, 2021, 9, 16859 DOI: 10.1039/D1TC04201G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements