Metal halide perovskites for resistive switching memory devices and artificial synapses

Bixin Li, Wei Hui, Xueqin Ran, Yingdong Xia, Fei Xia, Lingfeng Chao, Yonghua Chen and Wei Huang

J. Mater. Chem. C, 2019, 7, 7476
DOI: 10.1039/C9TC02233C

Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis

Woonbae Sohn, Hyerim Kim, Jung Hun Lee, Young-Seok Shim, Cheon Woo Moon and Hyojung Kim

Mater. Adv., 2025, 6, 4158
DOI: 10.1039/D5MA00337G

Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

Twinkle George and Arumugam Vadivel Murugan

Nanoscale, 2023, 15, 6960
DOI: 10.1039/D2NR07007C

Recent advances in flexible memristors for advanced computing and sensing

Jiaming Xu, Ziwang Luo, Long Chen, Xuhui Zhou, Haozhe Zhang, Yuanjin Zheng and Lei Wei

Mater. Horiz., 2024, 11, 4015
DOI: 10.1039/D4MH00291A

A layered (n-C4H9NH3)2CsAgBiBr7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio

So-Yeon Kim, June-Mo Yang, Sun-Ho Lee and Nam-Gyu Park

Nanoscale, 2021, 13, 12475
DOI: 10.1039/D1NR03245C

Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption

June-Mo Yang, Young-Kwang Jung, Ju-Hee Lee, Yong Churl Kim, So-Yeon Kim, Seunghwan Seo, Dong-Am Park, Jeong-Hyeon Kim, Se-Yong Jeong, In-Taek Han, Jin-Hong Park, Aron Walsh and Nam-Gyu Park

Nanoscale Horiz., 2021, 6, 987
DOI: 10.1039/D1NH00452B

Nucleation and crystal growth control for scalable solution-processed organic–inorganic hybrid perovskite solar cells

Hanlin Hu, Mriganka Singh, Xuejuan Wan, Jiaoning Tang, Chih-Wei Chu and Gang Li

J. Mater. Chem. A, 2020, 8, 1578
DOI: 10.1039/C9TA11245F

Resistive switching in formamidinium lead iodide perovskite nanocrystals: a contradiction to the bulk form

Chinnadurai Muthu, A. N. Resmi, Johnpaul K. Pious, G. Dayal, Nayana Krishna, K. B. Jinesh and C. Vijayakumar

J. Mater. Chem. C, 2021, 9, 288
DOI: 10.1039/D0TC03275A

Single crystal halide perovskites for resistive switching memory devices and artificial synapse

Hyojung Kim

Mater. Adv., 2025, 6, 5410
DOI: 10.1039/D5MA00609K

Transport mechanism of copper sulfide embedded carbon nitride thin films: a formation free memristor

Venkata K. Perla, Sarit K. Ghosh and Kaushik Mallick

Mater. Adv., 2020, 1, 228
DOI: 10.1039/D0MA00062K

Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devices

Feifei Luo, Liuxia Ruan, Junwei Tong, Yanzhao Wu, Caixiang Sun, Gaowu Qin, Fubo Tian and Xianmin Zhang

Phys. Chem. Chem. Phys., 2021, 23, 21757
DOI: 10.1039/D1CP02878B

Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films

Swapnadeep Poddar, Yuting Zhang, Yiyi Zhu, Qianpeng Zhang and Zhiyong Fan

Nanoscale, 2021, 13, 6184
DOI: 10.1039/D0NR09234G

Lead-free halide perovskites for high-performance thin-film flexible supercapacitor applications

Ankur Yadav, Ankush Saini, Praveen Kumar and Monojit Bag

J. Mater. Chem. C, 2024, 12, 197
DOI: 10.1039/D3TC02784H

Toward AI-ready hardware: review of single-crystal halide perovskite FET fabrication and performance

Hyojung Kim

Mater. Adv., 2026, 7, 2579
DOI: 10.1039/D5MA00713E

NIR-triggered logic gate in MXene-modified perovskite resistive random access memory

Rongbin Li, Yan Sun, Qianyu Zhao, Xin Hao, Haowei Liang, Shengang Xu, Yingliang Liu, Xiaoman Bi and Shaokui Cao

J. Mater. Chem. C, 2024, 12, 4762
DOI: 10.1039/D3TC03847E

Crystallization control of Cu(i)-halide via thermal evaporation for improving resistive switching memory performance

SangMyeong Lee, Bong Ki Hong, Sang-Uk Lee, Jong-In Huh, Geon Woo Yoon, Nam-Gyu Park and Hyun Suk Jung

Nanoscale, 2025, 17, 4008
DOI: 10.1039/D4NR04200J

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Abubakkar Siddik, Prabir Kumar Haldar, Tufan Paul, Ujjal Das, Arabinda Barman, Asim Roy and Pranab Kumar Sarkar

Nanoscale, 2021, 13, 8864
DOI: 10.1039/D0NR08214G

Two-dimensional halide perovskite memristors for resistive switching memory systems

Hyojung Kim

Mater. Adv., 2026, 7, 1986
DOI: 10.1039/D5MA00686D

The strategies of filament control for improving the resistive switching performance

Teng Li, Hongliang Yu, Stephenie Hiu Yuet Chen, Ye Zhou and Su-Ting Han

J. Mater. Chem. C, 2020, 8, 16295
DOI: 10.1039/D0TC03639K

Electrode dependence in halide perovskite memories: resistive switching behaviours

Gregory Soon How Thien, Mohd Arif Mohd Sarjidan, Noor Azrina Talik, Boon Tong Goh, Boon Kar Yap, Zhicai He and Kah-Yoong Chan

Mater. Chem. Front., 2022, 6, 3125
DOI: 10.1039/D2QM00614F

Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices

Milon Kundar, Koushik Gayen, Rajeev Ray, Dushyant Kushavah and Suman Kalyan Pal

Nanoscale, 2024, 16, 16159
DOI: 10.1039/D4NR01395F

Impact of local structure on halogen ion migration in layered methylammonium copper halide memory devices

Aniruddha Ray, Beatriz Martín-García, Alberto Martinelli, Davide Spirito, Federico Locardi, Davide Altamura, Cinzia Giannini, Mirko Prato, Liberato Manna and Ahmed L. Abdelhady

J. Mater. Chem. A, 2020, 8, 17516
DOI: 10.1039/D0TA06248K

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Hyojung Kim, Min-Ju Choi, Jun Min Suh, Ji Su Han, Sun Gil Kim, Quyet Van Le, Soo Young Kim and Ho Won Jang

NPG Asia Mater, 2020, 12
DOI: 10.1038/s41427-020-0202-2

Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors

Hyojung Kim, Min-ju Choi, Jun Min Suh, Young-Seok Shim, In Hyuk Im, Daijoon Hyun, Seok Joo Yang, Zhicheng Cai, Muhammad Hilal, Mi Gyoung Lee, Cheon Woo Moon, Soo Young Kim and Ho Won Jang

Materials Science in Semiconductor Processing, 2024, 182, 108718
DOI: 10.1016/j.mssp.2024.108718

Lead-free all-inorganic halide perovskite quantum dots: review and outlook

Da Eun Lee, Soo Young Kim and Ho Won Jang

J. Korean Ceram. Soc., 2020, 57, 455
DOI: 10.1007/s43207-020-00058-5

Exploration of lead-free novel double perovskite halides Na2TlBiX6 (X = Cl, Br, I) for flexible memory devices: Using DFT approach

Ibrar Ali Shah, Muhammad Imran, Fayyaz Hussain, Umbreen Rasheed, Ammar Mohamed Tighezza, R.M.A. Khalil, Muhammad Shoaib and Muhammad Fahad Ehsan

Materials Chemistry and Physics, 2024, 324, 129680
DOI: 10.1016/j.matchemphys.2024.129680

2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems

Hyojung Kim, Daijoon Hyun, Muhammad Hilal, Zhicheng Cai and Cheon Woo Moon

Electronics, 2024, 13, 3572
DOI: 10.3390/electronics13173572

Ultralow Current Switching in Flexible Hybrid PVP:MoS2/HfO x Bilayer Devices

Ishan Varun, Ajay Kumar Mahato, Vivek Raghuwanshi and Shree Prakash Tiwari

IEEE Trans. Electron Devices, 2020, 67, 3472
DOI: 10.1109/TED.2020.3003854

Halide perovskite memristors for optoelectronic memory and computing applications

Xiaohan Zhang, Yue Wang, Xiaoning Zhao, Zhongqiang Wang, Xuanyu Shan, Haiyang Xu and Yichun Liu

Information & Functional Materials, 2024, 1, 265
DOI: 10.1002/ifm2.23

Fabrication of C12H28ClN-assisted perovskites thin films with micrometer-sized grains via low-temperature hot-casting in ambient air for resistive memory device application

Nasir Ali, Sanam Attique, Sajid Rauf, Shahid Ali, Amir Khesro, Fazli Akram and Huizhen Wu

Materials Science and Engineering: B, 2022, 284, 115904
DOI: 10.1016/j.mseb.2022.115904

Vitamin needed: Lanthanides in optoelectronic applications of metal halide perovskites

Zicheng Li, Bolong Zhang, Zhihao Zhang, Jean-Claude Bünzli, Abd. Rashid bin Mohd Yusoff, Yong-Young Noh and Peng Gao

Materials Science and Engineering: R: Reports, 2023, 152, 100710
DOI: 10.1016/j.mser.2022.100710

Electric modulation of conduction in MAPbBr3 single crystals

Shanming Ke, Shangyu Luo, Jinhui Gong, Liwen Qiu, Renhong Liang, Yangbo Zhou, Bingcheng Luo, Baochang Cheng, Li Wang and Longlong Shu

J Adv Ceram, 2021, 10, 320
DOI: 10.1007/s40145-020-0442-1

Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories

Chi-Chang Wu, Wen-Fa Wu, Guan-Wei Lin and Wen-Luh Yang

IEEE Trans. Electron Devices, 2020, 67, 277
DOI: 10.1109/TED.2019.2952361

Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs3Sb2I9 Lead‐Free Perovskite Memory Devices

Subham Paramanik, Abhishek Maiti, Soumyo Chatterjee and Amlan J. Pal

Adv Elect Materials, 2022, 8
DOI: 10.1002/aelm.202100237

Recent advances in resistive switching memory devices based on diverse material platforms for next generation electronics

Wonseop Shin, Sungho Jang and Hyojung Kim

Journal of Science: Advanced Materials and Devices, 2025, 10, 100960
DOI: 10.1016/j.jsamd.2025.100960

Role of Metal Contacts on Halide Perovskite Memristors

José Carlos Pérez‐Martínez, Mariana Berruet, Cedric Gonzales, Saeed Salehpour, Ali Bahari, Belén Arredondo and Antonio Guerrero

Adv Funct Materials, 2023, 33
DOI: 10.1002/adfm.202305211

Effect of temperature variations on the behavior of a two-terminal organic–inorganic halide perovskite rewritable memristor for neuromorphic operations

Grigorii V. Nenashev, Andrey N. Aleshin, Igor P. Shcherbakov and Vasily N. Petrov

Solid State Communications, 2022, 348-349, 114768
DOI: 10.1016/j.ssc.2022.114768

High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors

Zicong Guo, Rui Xiong, Yuanyuan Zhu, Ziyu Wang, Jing Zhou, Yong Liu, Daobin Luo, Youqing Wang and Hongjun Wang

Applied Physics Letters, 2023, 122
DOI: 10.1063/5.0129311

2D and Quasi‐2D Halide Perovskites: Applications and Progress

Hyojung Kim, Kim Anh Huynh, Soo Young Kim, Quyet Van Le and Ho Won Jang

Physica Rapid Research Ltrs, 2020, 14
DOI: 10.1002/pssr.201900435

Fabrication and Modeling of Flexible High-Performance Resistive Switching Devices With Biomaterial Gelatin/Ultrathin HfOx Hybrid Bilayer

Anurag Dwivedi, Anil Lodhi, Shalu Saini, Harshit Agarwal and Shree Prakash Tiwari

IEEE Trans. Electron Devices, 2022, 69, 6423
DOI: 10.1109/TED.2022.3206255

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Bipul Kumar Mahato, Rohit Medwal, Ghulam Roshan Deen, S. N. Piramanayagam and Rajdeep Singh Rawat

Physica Rapid Research Ltrs, 2021, 15
DOI: 10.1002/pssr.202100050

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices

So-Yeon Kim, Heyi Zhang and Jenifer Rubio-Magnieto

J. Phys. Chem. Lett., 2024, 15, 10087
DOI: 10.1021/acs.jpclett.4c02170

Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device

Gregory Soon How Thien, Noor Azrina Talik, Boon Kar Yap, Hideki Nakajima, Sarayut Tunmee, Narong Chanlek and Boon Tong Goh

Ceramics International, 2020, 46, 29041
DOI: 10.1016/j.ceramint.2020.08.075

Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

Jia Xu, Yu Zhang, Ying Ding, Yuhua Gong and Jianxi Yao

Applied Physics Letters, 2024, 124
DOI: 10.1063/5.0196160

A Flexible Memristor Based on CsPbCl3 Nanocrystals for an Artificial Nociceptor

Ting Chen, Qian Ran, Yuchan Wang, Wenxia Zhang, Xiaosheng Tang, Yemei Han and Kailiang Zhang

J. Phys. Chem. Lett., 2024, 15, 8555
DOI: 10.1021/acs.jpclett.4c01944

New Transparent Magnetic Semiconductor NixCu1–xI which Can Perform as Either P-type or N-type and Success in the P–N Homojunction Diode

Anil Annadi, Nengduo Zhang, David Boon Kiang Lim and Hao Gong

ACS Appl. Mater. Interfaces, 2020, 12, 6048
DOI: 10.1021/acsami.9b19550

MAPbBr3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time

Hyojung Kim, Joo Sung Kim, Jaeho Choi, Young-Hoon Kim, Jun Min Suh, Min-Ju Choi, Young-Seok Shim, Soo Young Kim, Tae-Woo Lee and Ho Won Jang

ACS Appl. Mater. Interfaces, 2024, 16, 2457
DOI: 10.1021/acsami.3c01450

Review—Exploring Emerging Materials for Memristor Fabrication: A Review of Recent Progress

Mohit Kumar Saini, Mamta Khosla and Balwinder Raj

ECS J. Solid State Sci. Technol., 2024, 13, 115004
DOI: 10.1149/2162-8777/ad9401

Synthetic Powder-Based Thin (<0.1 μm) Cs3Bi2Br9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory

So-Yeon Kim, Dong-Am Park and Nam-Gyu Park

ACS Appl. Electron. Mater., 2022, 4, 2388
DOI: 10.1021/acsaelm.2c00201

Flexible Neuromorphic Electronics for Computing, Soft Robotics, and Neuroprosthetics

Hea‐Lim Park, Yeongjun Lee, Naryung Kim, Dae‐Gyo Seo, Gyeong‐Tak Go and Tae‐Woo Lee

Advanced Materials, 2020, 32
DOI: 10.1002/adma.201903558

Two-dimensional copper (II) halide-based hybrid perovskite templated by 2-chloroethylammonium: Crystal structures, phase transitions, optical and electrical properties

Farah Akrout, Fadhel Hajlaoui, Karim Karoui, Nathalie Audebrand, Thierry Roisnel and Nabil Zouari

Journal of Solid State Chemistry, 2020, 287, 121338
DOI: 10.1016/j.jssc.2020.121338

Triple-Cation Perovskite Resistive Switching Memory with Enhanced Endurance and Retention

Yang Huang, Lingzhi Tang, Chen Wang, Hongbo Fan, Zhenxuan Zhao, Huaqiang Wu, Min Xu, Rensheng Shen, Yiming Yang and Jiming Bian

ACS Appl. Electron. Mater., 2020, 2, 3695
DOI: 10.1021/acsaelm.0c00674

α‐CsPbI3 Quantum Dots ReRAM with High Air Stability Working by Valance Change Filamentary Mechanism

Da Eun Lee, In Hyuk Im, Ji Hyun Baek, Kyung Ju Kwak, Seung Ju Kim, Tae Hyung Lee, Jae Young Kim and Ho Won Jang

Small Methods, 2025, 9
DOI: 10.1002/smtd.202400514

Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives

Fengzhen Lv, Kang Ling, Tingting Zhong, Fuchi Liu, Xiaoguang Liang, Changming Zhu, Jun Liu and Wenjie Kong

Nanoscale Res Lett, 2020, 15
DOI: 10.1186/s11671-020-03356-3

Potential for multi-application advancements from doping zirconium (Zr) for improved optical, electrical, and resistive memory properties of zinc oxide (ZnO) thin films

Amit K Chawla, Navjot Hothi, Akula Umamaheswara Rao, Archana Singh Kharb, Avaani Chanana, Kifayat H Mir, Pramod Kumar, Tarun Garg, Vipin Chawla, Ravish Jain, Charu Pant and Sanjeev Kumar

Phys. Scr., 2024, 99, 095935
DOI: 10.1088/1402-4896/ad69dc

Halide-Perovskite-Based Memristor Devices and Their Application in Neuromorphic Computing

Soumitra Satapathi, Kanishka Raj, Yukta and Mohammad Adil Afroz

Phys. Rev. Applied, 2022, 18
DOI: 10.1103/PhysRevApplied.18.017001

Ion migration and interface engineering in emerging halide perovskite technologies for enhanced stability, mobility, and device optimization in FETs and memory devices

Hyojung Kim

Journal of Science: Advanced Materials and Devices, 2025, 10, 101014
DOI: 10.1016/j.jsamd.2025.101014

Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory

So‐Yeon Kim, June‐Mo Yang, Eun‐Suk Choi and Nam‐Gyu Park

Adv Funct Materials, 2020, 30
DOI: 10.1002/adfm.202002653

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

Ya‐Ting Chan, Yi Fu, Lu Yu, Feng‐Yu Wu, Ho‐Wei Wang, Ting‐Han Lin, Shun‐Hsiang Chan, Ming‐Chung Wu and Jer‐Chyi Wang

Adv Materials Inter, 2020, 7
DOI: 10.1002/admi.202000860

Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors

Mariana Berruet, José Carlos Pérez-Martínez, Beatriz Romero, Cedric Gonzales, Abdullah M. Al-Mayouf, Antonio Guerrero and Juan Bisquert

ACS Energy Lett., 2022, 7, 1214
DOI: 10.1021/acsenergylett.2c00121

Charge transport mechanisms in layered perovskite ACr2O7 (A = Be, Mg, Ca, Ba) structures: DFT perspectives

Muhammad Sajid, Aqsa Arooj, Ayesha Asma, Sarfraz Ahmad, Muhammad Imran, Fayyaz Hussain, Ammar Mohamed Tighezza, R.M.A. Khalil and Muhammad Shoaib

Journal of Physics and Chemistry of Solids, 2026, 208, 112996
DOI: 10.1016/j.jpcs.2025.112996

Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage

Wen‐Hu Qian, Xue‐Feng Cheng, Jin Zhou, Jing‐Hui He, Hua Li, Qing‐Feng Xu, Na‐Jun Li, Dong‐Yun Chen, Zhi‐Gang Yao and Jian‐Mei Lu

InfoMat, 2020, 2, 743
DOI: 10.1002/inf2.12066

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Chen Zou, Lijun He and Lih Y. Lin

Physica Rapid Research Ltrs, 2019, 13
DOI: 10.1002/pssr.201900182

Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage

Chia‐Shuo Li, Sheng‐Wen Kuo, Yu‐Tien Wu, Po‐Hang Chang, I‐Chih Ni, Mei‐Hsin Chen and Chih‐I Wu

Adv Materials Inter, 2020, 7
DOI: 10.1002/admi.202000630

Recent Advances in Inorganic Oxide‐Based Resistive Random Access Memory: Challenges and Strategies for Practical Applications

Anurag Pritam, Anwesha Mahapatra, Ritu Gupta, Shamiul Alam, Ahmedullah Aziz and Prakash Chandra Mondal

ChemPlusChem, 2026, 91
DOI: 10.1002/cplu.202500487

Halide Perovskite: The Key to Overcoming von Neumann Bottlenecks in AI Workloads

Geon Kim, Sunghyun Jang and Hyojung Kim

Electron. Mater. Lett., 2025, 21, 756
DOI: 10.1007/s13391-025-00597-1

A Statistical Learning Framework for Accelerated Bandgap Prediction of Inorganic Compounds

Suryanaman Chaube, Prerna Khullar, Sriram Goverapet Srinivasan and Beena Rai

Journal of Elec Materi, 2020, 49, 752
DOI: 10.1007/s11664-019-07779-2

Halide perovskites for emerging applications beyond photovoltaics: Recent progress and future prospects

Pilik Basumatary and Dhriti Sundar Ghosh

Journal of Applied Physics, 2025, 138
DOI: 10.1063/5.0252837

Halide Perovskite Memristor Crossbar Arrays for Low Voltage in Memory Computing

Hyojung Kim

Adv Materials Inter, 2025, 12
DOI: 10.1002/admi.202500729

A density functional theory study of the structural, electronic, and optical properties of XGaO3 (X = V, Nb) perovskites for optoelectronic applications

Syed Awais Rouf, Muhammad Iqbal Hussain, Umair Mumtaz, Abdul Mannan Majeed and Hafiz Tariq Masood

J Comput Electron, 2021, 20, 1484
DOI: 10.1007/s10825-021-01718-3

Electrical Behavior of a Two-Terminal Organic–Inorganic Halide Perovskite Rewritable Memristor for Neuromorphic Operations

G. V. Nenashev and A. N. Aleshin

Bull. Russ. Acad. Sci. Phys., 2023, 87, 832
DOI: 10.3103/S1062873823702076

Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

Ajit Kumar, Mokurala Krishnaiah, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon‐Bin Jo, Geun Lee, Sangwook Youn, Hyungjin Kim and Sung Hun Jin

Adv Funct Materials, 2024, 34
DOI: 10.1002/adfm.202310780

Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor

Ismael Fernandez‐Guillen, Clara A. Aranda, Pablo F. Betancur, Marta Vallés‐Pelarda, Cristina Momblona, Teresa S. Ripolles, Rafael Abargues and Pablo P. Boix

Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202300475

Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching

Younghoon Kim, Changdeuck Bae, Hyun Suk Jung and Hyunjung Shin

APL Materials, 2019, 7
DOI: 10.1063/1.5109525

Metal Halide Perovskite/Electrode Contacts in Charge‐Transporting‐Layer‐Free Devices

Deli Li, Xue Dong, Peng Cheng, Lin Song, Zhongbin Wu, Yonghua Chen and Wei Huang

Advanced Science, 2022, 9
DOI: 10.1002/advs.202203683

MXenes: promising 2D memristor materials for neuromorphic computing components

Monika Patel, Neelgund Ramesh Hemanth, Jeny Gosai, Ranjit Mohili, Ankur Solanki, Mohendra Roy, Baizeng Fang and Nitin K. Chaudhari

Trends in Chemistry, 2022, 4, 835
DOI: 10.1016/j.trechm.2022.06.004

Two Dimensional MXenes Drive Multifunctional Resistive Memory, Gas Sensing, and Gasistor Devices: A Perspective

Hyojung Kim

Electron. Mater. Lett., 2026, 22, 103
DOI: 10.1007/s13391-025-00599-z

Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

Yuan-Wen Hsiao, Shi-Yu Wang, Cheng-Liang Huang, Ching-Chich Leu and Chuan-Feng Shih

Nanomaterials, 2020, 10, 1155
DOI: 10.3390/nano10061155

Designing metal halide perovskite nanoparticle-based resistive random-access memory devices through chemical treatments

Junhyuk Ahn, Junsung Bang, Young-Min Kim, Seongkeun Oh, Soo Young Kim, Yun-Mo Sung and Soong Ju Oh

Materials Today Nano, 2023, 24, 100388
DOI: 10.1016/j.mtnano.2023.100388

Mixed Conductivity of Hybrid Halide Perovskites: Emerging Opportunities and Challenges

Moritz H. Futscher and Jovana V. Milić

Front. Energy Res., 2021, 9
DOI: 10.3389/fenrg.2021.629074

Current Oscillations and Intermittent Emission Near an Electrode Interface in a Hybrid Organic–Inorganic Perovskite Single Crystal

Chathuranga Hettiarachchi, Aozhen Xie, Tien Hoa Nguyen, Junhong Yu, Francesco Maddalena, Xuan Quyen Dinh, Muhammad Danang Birowosuto and Cuong Dang

ACS Appl. Mater. Interfaces, 2019, 11, 42838
DOI: 10.1021/acsami.9b15791

Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory

SangMyeong Lee, Hyojung Kim, Dong Hoe Kim, Won Bin Kim, Jae Myeong Lee, Jaeho Choi, Hyunjung Shin, Gill Sang Han, Ho Won Jang and Hyun Suk Jung

ACS Appl. Mater. Interfaces, 2020, 12, 17039
DOI: 10.1021/acsami.9b22918

Enhancing multi-state programming and synaptic plasticity through optical stimulation in Bi-alloyed Cs2AgInCl6 double perovskite based memristor

Guiyue Kou, Mingfei Mu, Mouyou Lin, Zhifang Zhu, Xiaopin Yang and Yanyan Yang

Journal of Alloys and Compounds, 2023, 957, 169999
DOI: 10.1016/j.jallcom.2023.169999

Exploring the potential of halide perovskites in designing resistive switching memory systems for next-generation electronic devices

Hyerim Kim, Woonbae Sohn, Muhammad Hilal, Zhicheng Cai, Jian Hou, Wonseop Shin, Geon Kim, Young-Seok Shim, Cheon Woo Moon and Hyojung Kim

J. Korean Ceram. Soc., 2025, 62, 1099
DOI: 10.1007/s43207-025-00545-7

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Feng Dou, Xiaofeng Zhao, Meng Gao, Zhaohua He, Shuao Wang, Hanzhou Liu, Shuhong Wang and Cheng Wang

Macro Chemistry & Physics, 2022, 223
DOI: 10.1002/macp.202200104

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

Geon Kim and Hyojung Kim

Materials Today Sustainability, 2025, 32, 101239
DOI: 10.1016/j.mtsust.2025.101239

Multi-ion controllable metal halide ionic structure for selective short- and long-term memorable synaptic devices

Daseul Lee, Seung-Jea Lee, Jae Ho Kim, Geonguk Kim, Wan-Gil Jung, Juyun Park, Yong-Cheol Kang, Young-Hoon Kim, Myungkwan Song, Han Seul Kim and Jin Woo Choi

Nano Today, 2024, 55, 102184
DOI: 10.1016/j.nantod.2024.102184

Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

Tingting Zhong, Yongfu Qin, Fengzhen Lv, Haijun Qin and Xuedong Tian

Nanoscale Res Lett, 2021, 16
DOI: 10.1186/s11671-021-03636-6

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

Yang Li, Cheng Zhang, Zhiming Shi, Chunlan Ma, Jun Wang and Qichun Zhang

Sci. China Mater., 2022, 65, 2110
DOI: 10.1007/s40843-021-1771-5

Spinel ferrites for resistive random access memory applications

Ketankumar Gayakvad, Kaushik Somdatta, Vikas Mathe, Tukaram Dongale, Madhuri W and Ketaki Patankar

emergent mater., 2024, 7, 103
DOI: 10.1007/s42247-023-00576-y

Comparative Review of Field-Effect Transistors Based on Three-Dimensional, Two-Dimensional, and Double Halide Perovskites

Hyojung Kim

Electron. Mater. Lett., 2025, 21, 650
DOI: 10.1007/s13391-025-00588-2

Emerging low-dimensional perovskite resistive switching memristors: from fundamentals to devices

Shuanglong Wang, Hong Lian, Haifeng Ling, Hao Wu, Tianxiao Xiao, Yijia Huang and Peter Müller-Buschbaum

Opto-Electron Adv, 2025, 8, 240316
DOI: 10.29026/oea.2025.240316

Discrete resistive switching characteristics in metal-free phthalocyanine and Dy-phthalocyanine based devices

Liuxia Ruan, Junwei Tong, Feifei Luo, Yanzhao Wu, Gaowu Qin and Xianmin Zhang

Materials Today Communications, 2022, 30, 103131
DOI: 10.1016/j.mtcomm.2022.103131

Resistive switching memories featuring neuromorphic functionality for advanced wearable electronic platforms

Hyojung Kim

Journal of Science: Advanced Materials and Devices, 2025, 10, 101007
DOI: 10.1016/j.jsamd.2025.101007

Metal Halide Perovskite-Based Memristors for Emerging Memory Applications

Youngjun Park and Jang-Sik Lee

J. Phys. Chem. Lett., 2022, 13, 5638
DOI: 10.1021/acs.jpclett.2c01303

Recent advances in MXene materials for resistive switching memory devices

Hyerim Kim, Woonbae Sohn, Jung Hun Lee, Seok Joo Yang, Young-Seok Shim, Cheon Woo Moon and Hyojung Kim

J. Korean Ceram. Soc., 2026, 63, 171
DOI: 10.1007/s43207-025-00547-5

Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device

Ujjal Das, Anurag Dehingia, Bappi Paul, Pranab Kumar Sarkar and Asim Roy

J. Phys. Chem. C, 2021, 125, 13610
DOI: 10.1021/acs.jpcc.1c02203

Organic and perovskite memristors for neuromorphic computing

Hea-Lim Park and Tae-Woo Lee

Organic Electronics, 2021, 98, 106301
DOI: 10.1016/j.orgel.2021.106301

Stable Halide Perovskite Memristor Utilizing Innovative Silver/Bismuth Electrode as an Alternative to Gold

Jiuchao Feng, Yanwei Fan, Yue Wang, Qing Song, Yang Liu, Yonghua Chen, Deli Li and Wei Huang

Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202420547

Halide perovskites for next generation electronics integrating resistive switching memory and gas sensing

Hyojung Kim

J. Korean Ceram. Soc., 2025, 62, 845
DOI: 10.1007/s43207-025-00529-7

Bipolar resistive switching in MAPbI3−xClx mixed halide perovskite with polyvinylpyrrolidone additives

Byoungnam Park

Funct. Mater. Lett., 2025, 18
DOI: 10.1142/S1793604725510026

Multimodal MXene Artificial Synapses Realizing Optoelectronic, Olfactory, and Tactile Neuromorphic Memory in Wearable Devices

Hyojung Kim

Electron. Mater. Lett., 2025, 21, 743
DOI: 10.1007/s13391-025-00593-5

Enhancing resistive switching behavior in double perovskites through doping and silver vacancies: A first-principles analysis

Aqsa Arooj, Muhammad Imran, Sarfraz Ahmad, Mansour K. Gatasheh, Fayyaz Hussain, Syed Mansoor Ali, Rana Muhammad Arif Khalil and Muhammad Fahad Ehsan

Journal of Physics and Chemistry of Solids, 2025, 203, 112714
DOI: 10.1016/j.jpcs.2025.112714

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Min‐Ci Wu, Yi‐Hsin Ting, Jui‐Yuan Chen and Wen‐Wei Wu

Advanced Science, 2019, 6
DOI: 10.1002/advs.201902363

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application

Dhananjay Mishra, Krishnaiah Mokurala, Ajit Kumar, Seung Gi Seo, Hyeon Bin Jo and Sung Hun Jin

Adv Funct Materials, 2023, 33
DOI: 10.1002/adfm.202211022

Halide Perovskites for Resistive Switching Memory

Kaijin Kang, Wei Hu and Xiaosheng Tang

J. Phys. Chem. Lett., 2021, 12, 11673
DOI: 10.1021/acs.jpclett.1c03408

Solution-processed perovskite crystals for electronics: Moving forward

Feng Li, Tiebin Yang and Rongkun Zheng

Matter, 2022, 5, 1700
DOI: 10.1016/j.matt.2022.04.022

Stretchable resistive switching memory devices for wearable systems

Hyojung Kim, In Hyuk Im, Daijoon Hyun, Muhammad Hilal, Zhicheng Cai, Seok Joo Yang, Young-Seok Shim and Cheon Woo Moon

J. Korean Ceram. Soc., 2025, 62, 397
DOI: 10.1007/s43207-025-00497-y

Strategic extended air stability of organolead halide perovskite nonvolatile memory devices

Eunji Yoo, S.V.N. Pammi, Kyu Young Kim, Tran-Van Dang, Ji-Ho Eom, Young Jin Choi and Soon-Gil Yoon

Journal of Alloys and Compounds, 2019, 811, 151999
DOI: 10.1016/j.jallcom.2019.151999

Defect Engineering of Metal Halide Perovskite Nanocrystals via Spontaneous Diffusion of Ag Nanocrystals

Sanghyun Jeon, Junhyuk Ahn, Myung‐Chul Jung, Ho Kun Woo, Junsung Bang, Byung Ku Jung, Seongkeun Oh, Sang Yeop Lee, Kyu Joon Lee, Taejong Paik, Don‐Hyung Ha, Jae‐Pyoung Ahn, Sohee Jeong, Dong Hoe Kim, Jun Hong Noh, Ho Seong Jang, Myung Joon Han and Soong Ju Oh

Small, 2024, 20
DOI: 10.1002/smll.202307032

Recent advances in halide perovskite material classes for field-effect transistors

Hyojung Kim

Journal of Science: Advanced Materials and Devices, 2025, 10, 101000
DOI: 10.1016/j.jsamd.2025.101000

Enhanced Optical Properties and Stability of CsPbBr3 Nanocrystals Through Nickel Doping

Hayeong Kim, Sa‐Rang Bae, Tae Hyung Lee, Hyoseong Lee, Heemin Kang, Sungnam Park, Ho Won Jang and Soo Young Kim

Adv Funct Materials, 2021, 31
DOI: 10.1002/adfm.202102770

Progress of lead-free perovskite and its resistance switching performance

Fan-Ju Zeng, Yong-Qian Tan, Xiao-Sheng Tang, Xiao-Mei Zhang and Hai-Feng Yin

Acta Phys. Sin., 2021, 70, 157301
DOI: 10.7498/aps.70.20210065

Artificial optoelectronic synapse based on epitaxial Ba0.6Sr0.4TiO3 thin films memristor for neuromorphic computing and image recognition

Jingjuan Wang, Yiduo Shao, Changliang Li, Baoting Liu and Xiaobing Yan

Applied Physics Letters, 2022, 121
DOI: 10.1063/5.0124217

Nanocrystal Materials for Resistive Memory and Artificial Synapses: Progress and Prospects

Yingchun Chen, Dunkui Chen, Chi Zhang and Xian Zhang

NANOTEC, 2024, 18, 237
DOI: 10.2174/1872210517666230413092108

Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories

Ping Guan, Shuaixin Wu, Haoyan Meng, Zhenya Li, Mengru Liu, Yuping An, Yingliang Liu, Shengang Xu and Shaokui Cao

ACS Appl. Mater. Interfaces, 2024, 16, 66239
DOI: 10.1021/acsami.4c09526

Performance Enhancement of Solution-Processed Organic Memories by Exploiting Synergistic Organic–Inorganic Hybrid Composites

Koustav Kashyap Gogoi and Avijit Chowdhury

J. Phys. Chem. C, 2020, 124, 1108
DOI: 10.1021/acs.jpcc.9b09126

Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs4PbBr6 Perovskite Films

Ruqi Chen, Jun Xu, Meimei Lao, Zhiwei Liang, Yukai Chen, Chujie Zhong, Linjun Huang, Aize Hao and Muhammad Ismail

Physica Rapid Research Ltrs, 2019, 13
DOI: 10.1002/pssr.201900397

Halide Perovskite Quantum Dots Form a Scalable Unified Platform for Resistive Memories, Crossbar Networks, Neuromorphic Synapses, and Field Effect Transistors

Hyojung Kim

Adv Materials Inter, 2025, 12
DOI: 10.1002/admi.202500506

Resistive switching characteristics of methyl-ammonium lead iodide perovskite during atmosphere degradation

Seema Wafee, Ching-Chich Leu, Yu-Wen Chen and Bernard Haochih Liu

Journal of Alloys and Compounds, 2023, 963, 171231
DOI: 10.1016/j.jallcom.2023.171231

Recent Progress in Resistive Switching Memory Devices Covering Metal Oxides, Polymers, Bioinspired Materials, and Halide Perovskites

Hyojung Kim

Electron. Mater. Lett., 2025, 21, 487
DOI: 10.1007/s13391-025-00579-3

Low‐Dimensional Metal‐Halide Perovskites as High‐Performance Materials for Memory Applications

Xinwei Guan, Zhihao Lei, Xuechao Yu, Chun‐Ho Lin, Jing‐Kai Huang, Chien‐Yu Huang, Long Hu, Feng Li, Ajayan Vinu, Jiabao Yi and Tom Wu

Small, 2022, 18
DOI: 10.1002/smll.202203311

A Comprehensive Review of Electrochemical Metallization and Valence Change Mechanisms in Filamentary Resistive Switching of Halide Perovskite-Based Memory Devices

Hyojung Kim, Seok Joo Yang, Young-Seok Shim and Cheon Woo Moon

ACS Appl. Mater. Interfaces, 2025, 17, 50122
DOI: 10.1021/acsami.5c09862

Resistive switching memories with two-dimensional halide perovskites for flexible electronics

Hyojung Kim

J. Korean Ceram. Soc., 2026
DOI: 10.1007/s43207-026-00610-9

Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high- Tc cuprate superconductors YBa2Cu3O7−x and the colossal magnetoresistive manganite ferromagnets La2/3X1/3MnO3+δ(X=Ca,Sr)

R. de Andrés Prada, T. Golod, O. M. Kapran, E. A. Borodianskyi, Ch. Bernhard and V. M. Krasnov

Phys. Rev. B, 2019, 99
DOI: 10.1103/PhysRevB.99.214510

Artificial Synapse Based on a δ-FAPbI3/Atomic-Layer-Deposited SnO2 Bilayer Memristor

Sang-Uk Lee, So-Yeon Kim, Joo-Hong Lee, Ji Hyun Baek, Jin-Wook Lee, Ho Won Jang and Nam-Gyu Park

Nano Lett., 2024
DOI: 10.1021/acs.nanolett.4c00253

2D halide perovskites in modern electronics and their impact on high-performance resistive-switching memory device and field-effect transistors

Hyojung Kim

J. Korean Ceram. Soc., 2026, 63, 1
DOI: 10.1007/s43207-025-00538-6

Moisture trap engineering for recoverable and stable responsivity generation in perovskite photodiode

Byung Gi Kim, Woongsik Jang, Ji Yun Chun, Junmin Lee and Dong Hwan Wang

Journal of Industrial and Engineering Chemistry, 2022, 116, 331
DOI: 10.1016/j.jiec.2022.09.023

Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device

Ujjal Das, Anupriya Nyayban, Bappi Paul, Arabinda Barman, Pranab Sarkar and Asim Roy

ACS Appl. Electron. Mater., 2020, 2, 1343
DOI: 10.1021/acsaelm.0c00130

A Review on Resistive RAM: From Material Properties to Switching Characteristics, Reliability, Models and Applications

T. Nivetha, B. Bindu and Noor Ain Kamsani

Trans. Electr. Electron. Mater., 2025, 26, 405
DOI: 10.1007/s42341-025-00647-3

Effects of Nb doping on switching-voltage stability of zinc oxide thin films

Cheng-Ying Li, Chun-Cheng Lin, Sheng-Yuan Chu, Jun-Ting Lin, Chih-Yu Huang and Cheng-Shong Hong

Journal of Applied Physics, 2020, 128
DOI: 10.1063/1.5140027

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film-based memristors

Yuanyuan Zhu, Zicong Guo, Mengyao Chen, Pan Zhang, Peng Shao, Daobin Luo, Youqing Wang, Yong Liu, Rui Xiong and Hongjun Wang

Applied Physics Letters, 2023, 123
DOI: 10.1063/5.0157680

Shedding light on the energy applications of emerging 2D hybrid organic-inorganic halide perovskites

Neng Li, Yufei Yang, Zuhao Shi, Zhigao Lan, Arramel Arramel, Peng Zhang, Wee-Jun Ong, Jizhou Jiang and Jianfeng Lu

iScience, 2022, 25, 103753
DOI: 10.1016/j.isci.2022.103753

Theory of Hysteresis in Halide Perovskites by Integration of the Equivalent Circuit

Juan Bisquert, Antonio Guerrero and Cedric Gonzales

ACS Phys. Chem Au, 2021, 1, 25
DOI: 10.1021/acsphyschemau.1c00009

Sn doping enhanced current rectification in MAPbBr3 nanocrystal-metal junction for photodetection

Karabi Chatterjee, Monisha Nayak, Abu Jahid Akhtar and Sudip K. Saha

Materials Today: Proceedings, 2022, 66, 3205
DOI: 10.1016/j.matpr.2022.06.208

High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI4 Organic–Inorganic Hybrid Perovskite

Binglin Liu, Junan Lai, Daofu Wu, Liye Li, Kaijin Kang, Wei Hu and Xiaosheng Tang

J. Phys. Chem. Lett., 2022, 13, 7653
DOI: 10.1021/acs.jpclett.2c01786

Lead-free halide perovskite memristors for scalable crossbar arrays

Do Yeon Heo and Hyojung Kim

Nano Convergence, 2025, 12
DOI: 10.1186/s40580-025-00507-z