This review highlights key features of PDA-NFA: molecular design, diverse grafting sites, advanced synthesis, morphology control, and optimized device performance. This review provides a vision for high-performance PDA-NFA for NF-OSCs.
Se-annulated PDI-SePDI device achieved a 56.64% elevated PCE of 5.31%, which was mainly due to enhanced exciton dissociation, suppressed charge recombination, and increased charge mobility benefiting from beneficial microstructural morphology.
A crossbar array composed of a panchromatic light-harvesting triad and charge-separation triad has been synthesized and examined in fundamental photophysical studies.
We report a series of hydroxylated PDI derivatives as CILs with exceptional comprehensive performance. After continuous illumination, the extrapolated T80 lifetime for the device with a 30 nm-thick PDI-Br-3O is estimated to be 3995 h.
We report ortho π-extended perylene diimide derivatives, PDI-IPD and PDI-IPZ. Both compounds exhibit n-type semiconductor characteristics in organic field-effect transistors (OFETs). Notably, PDI-IPZ achieves electron mobility of 0.116 cm2 V−1 s−1.