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Biodegradable Natural Pectin‐Based Flexible Multilevel Resistive Switching Memory for Transient Electronics

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Effect of Co doping on unipolar resistance switching in Pt/Co:ZnO/Pt structures

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Memristive behavior of ZnO film with embedded Ti nano-layers

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Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory

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Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm

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Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory

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Current Applied Physics, 2018, 18, 924
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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

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Optimized chalcogenide medium for inherently activated resistive switching device

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Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors

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Multistate Resistive Switching with Self-Rectifying Behavior and Synaptic Characteristics in a Solution-processed ZnO/PTAA Bilayer Memristor

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A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

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Towards High‐Performance Resistive Switching Behavior through Embedding a D‐A System into 2D Imine‐Linked Covalent Organic Frameworks

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Approaching the Ideal Linearity in Epitaxial Crystalline‐Type Memristor by Controlling Filament Growth

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Improved performance of Ta2O5−x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

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Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory

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Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

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Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p⁺-Si/n-ZnO Heterojunction Memristor

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The resistive switching effects in BaTiO3/ZnO/BaTiO3/Carbon film

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Improvement of resistive switching memory achieved by using arc-shaped bottom electrode

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Au Nanocrystals Modulate Resistive Switching and Magnetic Properties of Spinel Cobalt Oxide-Based Memory Devices

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Forming-free electrochemical metallization resistive memory devices based on nanoporous TiO x N y thin film

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Voltage-Induced Power-Law Plasticity in Silver Nanocomposites Near the Percolation Threshold

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Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM

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Phosphorene/ZnO Nano‐Heterojunctions for Broadband Photonic Nonvolatile Memory Applications

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Au‐Nanodots Embedded Self‐Rectifying Analog Charge Trap Memristor with Modified Bias Voltage Application Method for Stable Multi‐Bit Hardware‐Based Neural Network

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

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Nanoscale Res Lett, 2016, 11
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Highly flexible and uniform switching of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)based RRAM achieved through Ag NWs embedded for high-density storage

Juan Zhang, Wanting Zheng, Xin Zhang, Libing Zhang, Hehong Shao, Xiuwei Zhu and Liangliang Chen

Materials Today Communications, 2024, 39, 109133
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Reversible transitions among four modes of nonpolar resistive switching characteristics in nano-crystalline zinc ferrite magnetic thin films

Muhammad Ismail, Aize Hao, Shuai He, Wenhua Huang, Ni Qin and Dinghua Bao

Journal of Alloys and Compounds, 2018, 753, 100
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Highly uniform switching of HfO2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage

Meng Qi, Ye Tao, Zhongqiang Wang, Haiyang Xu, Xiaoning Zhao, Weizhen Liu, Jiangang Ma and Yichun Liu

Applied Surface Science, 2018, 458, 216
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Tuning of photoinduced resistive switching characteristics of MoS2/PVA photomemristor via ultrasonication

Krishma Anand, Ravneet Kaur and S.K. Tripathi

Journal of Alloys and Compounds, 2025, 1020, 179307
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The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device

Lei Zhang, Hao Yu, Lingxing Xiong, Wenhui Zhu and Liancheng Wang

J Mater Sci: Mater Electron, 2019, 30, 8629
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Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array

Qi Xue, Yan Peng, Liang Cao, Yuanyuan Xia, Jianghu Liang, Chun-Chao Chen, Ming Li and Tao Hang

ACS Appl. Mater. Interfaces, 2022, 14, 25710
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Micro-light-emitting diode with n-GaN/NiO/Au-based resistive-switching electrode for compact driving circuitry

Byeong Ryong Lee, Ju Hyun Park and Tae Geun Kim

Journal of Alloys and Compounds, 2020, 823, 153762
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Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin and Yichun Liu

J. Semicond., 2021, 42, 014103
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Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS2 Quantum Dots

Yizhen Li, Xinhui Zhao, Ke Chang, Yiru Niu, Xinna Yu and Hui Wang

Phys. Rev. Applied, 2022, 17
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Cu doping effect on the resistive switching behaviors of CoFe2O4 thin films

Zhao Xiahou, Deok Hyeon Kim, Hongtao Xu, Ying Li, Bo Wha Lee and Chunli Liu

J Mater Sci: Mater Electron, 2016, 27, 2255
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Metal nanoparticles layer boosted resistive switching property in NiFe2O4-based memory devices

Shuting Wang, Xueer Ning, Aize Hao and Ruqi Chen

Journal of Alloys and Compounds, 2022, 908, 164569
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Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory

Wentao Ding, Ye Tao, Xuhong Li, Ya Lin, Zhongqiang Wang, Haiyang Xu, Xiaoning Zhao, Weizhen Liu, Jiangang Ma and Yichun Liu

Physica Rapid Research Ltrs, 2018, 12
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Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition

Sen Liu, Wei Wang, QingJiang Li, XiaoLong Zhao, Nan Li, Hui Xu, Qi Liu and Ming Liu

Sci. China Phys. Mech. Astron., 2016, 59
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6-Bit Storage and Statistical Evolution of Quantum Conductance in a Ta2O5-Based Memristor Device

Prince Kumar and Suryanarayana Jammalamadaka

ACS Appl. Electron. Mater., 2025, 7, 5090
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Carbon quantum dots boosted resistive switching and magnetic properties in Co3O4-based memory devices

Chuangye Yao, Qixiao Wu and Tao Tian

Ceramics International, 2024, 50, 51832
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Highly uniform resistive switching properties of NiFe2O4 films by embedding well-ordered pyramid-shaped Pt/Au nanostructures

Jiacheng Li, Chuangye Yao, Wenhua Huang, Ni Qin and Dinghua Bao

Journal of Alloys and Compounds, 2022, 890, 161814
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Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer

Ye Tao, Wentao Ding, Zhongqiang Wang, Haiyang Xu, Xiaoning Zhao, Xuhong Li, Weizhen Liu, Jiangang Ma and Yichun Liu

Applied Surface Science, 2018, 440, 107
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Reliable restriction of conductive filament in graphene oxide based RRAM devices enabled by a locally graphitized amorphous carbon layer

Ye Tao, Peng Zhao, Ye Li and Xiaoning Zhao

Jpn. J. Appl. Phys., 2020, 59, 054002
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