Issue 15, 2016

Large scale ZrS2 atomically thin layers

Abstract

We present the scalable synthesis of large scale (up to 30 μm in lateral size), single-crystalline, atomically thin hexagonal ZrS2 nanoflakes via an optimized chemical vapor deposition (CVD) method on traditional substrates (silica, sapphire). The Vienna ab initio simulation package (VASP) was employed to calculate the adhesion energy and provided an exact theoretical account for the substrate and temperature dependent growth process of ZrS2 nanoflakes. Photodetectors based on ZrS2 nanoflakes were fabricated and displayed a remarkable photoconductivity under visible light. Field-effect transistors based on ZrS2 monolayers exhibited obvious n-type transport characteristics with relatively high mobility.

Graphical abstract: Large scale ZrS2 atomically thin layers

Supplementary files

Article information

Article type
Communication
Submitted
19 jan 2016
Accepted
09 mar 2016
First published
09 mar 2016

J. Mater. Chem. C, 2016,4, 3143-3148

Large scale ZrS2 atomically thin layers

X. Wang, L. Huang, X. Jiang, Y. Li, Z. Wei and J. Li, J. Mater. Chem. C, 2016, 4, 3143 DOI: 10.1039/C6TC00254D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements