Issue 6, 2024

Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

Abstract

As the downscaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM technology faces various challenges in securing cost-effective high cell transistor performance. Therefore, many researchers are exploring the application of next-generation semiconductor materials, such as transition oxide semiconductors (OSs) and metal dichalcogenides (TMDs), to address these challenges and to realize 3D DRAM. This study provides an overview of the proposed structures for 3D DRAM, compares the characteristics of OSs and TMDs, and discusses the feasibility of employing the OSs and TMDs as the channel material for 3D DRAM. Furthermore, we review recent progress in 3D DRAM using the OSs, discussing their potential to overcome challenges in silicon-based approaches.

Graphical abstract: Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

Article information

Article type
Review Article
Submitted
05 feb 2024
Accepted
22 mar 2024
First published
25 mar 2024

Nanoscale Horiz., 2024,9, 934-945

Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

J. S. Hur, S. Lee, J. Moon, H. Jung, J. Jeon, S. H. Yoon, J. Park and J. K. Jeong, Nanoscale Horiz., 2024, 9, 934 DOI: 10.1039/D4NH00057A

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