Issue 3, 2024

Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires

Abstract

Memristive devices have been demonstrated to exhibit quantum conductance effects at room temperature. In these devices, a detailed understanding of the relationship between electrochemical processes and ionic dynamic underlying the formation of atomic-sized conductive filaments and corresponding electronic transport properties in the quantum regime still represents a challenge. In this work, we report on quantum conductance effects in single memristive Ag nanowires (NWs) through a combined experimental and simulation approach that combines advanced classical molecular dynamics (MD) algorithms and quantum transport simulations (DFT). This approach provides new insights on quantum conductance effects in memristive devices by unravelling the intrinsic relationship between electronic transport and atomic dynamic reconfiguration of the nanofilment, by shedding light on deviations from integer multiples of the fundamental quantum of conductance depending on peculiar dynamic trajectories of nanofilament reconfiguration and on conductance fluctuations relying on atomic rearrangement due to thermal fluctuations.

Graphical abstract: Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires

Supplementary files

Article information

Article type
Communication
Submitted
23 okt 2023
Accepted
08 jan 2024
First published
09 jan 2024
This article is Open Access
Creative Commons BY license

Nanoscale Horiz., 2024,9, 416-426

Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires

G. Milano, F. Raffone, K. Bejtka, I. De Carlo, M. Fretto, F. C. Pirri, G. Cicero, C. Ricciardi and I. Valov, Nanoscale Horiz., 2024, 9, 416 DOI: 10.1039/D3NH00476G

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