Issue 40, 2023

Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P–N diode

Abstract

The p–n junction, one of the prominent electrical components capable of being utilized in electronics and optoelectronics, has attracted renewed interest due to recent research in two-dimensional (2D) materials. In this work, we constructed a heterostructure p–n diode based on MoTe2 and SnS2. Sweeping the back-gate voltage (Vbg) effectively results in a high rectification ratio of 2.79 × 105 at Vbg = +10 V and the lowest ideality factor (η) of about 1.25 was achievedwhen Vbg = −30 V. The interlayer electron–hole recombination is responsible for the variation in rectification behavior. This photodiode exhibits effective photodetection capabilities and promising merit statistics. The maximum change in photocurrent (Iph) is measured to be about 90 nA at Vds = 0.9 V, and the device exhibited a high responsivity (R) of 5.8 × 104 mA W−1, while the maximum external quantum efficiency (EQE) and detectivity are calculated to be about 3.27 × 104 (%) and 2.47 × 1010 Jones for the device, respectively, when illuminated with 220 nm wavelength incident light at a power intensity of 11 mW cm−2. The average rise/fall times for the 220 nm wavelength at Vds = 0.9 V are observed to be 0.29 s/0.38 s, respectively. We examined the photoresponse of the device as a function of time at different wavelengths (λ = 970–220 nm) of the incident light and at different power intensities (P = 11–44 mW cm−2) of the incident light. The maximum values of Voc = 0.32 V and Isc = −0.40 nA were achieved at P = 44 mW cm−2. The p-MoTe2/n-SnS2-based device has excellent rectifying and optoelectronic properties.

Graphical abstract: Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P–N diode

Supplementary files

Article information

Article type
Paper
Submitted
08 jun 2023
Accepted
22 sep 2023
First published
22 sep 2023

J. Mater. Chem. C, 2023,11, 13981-13990

Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P–N diode

E. Elahi, M. A. Khan, J. Jeon, S. Jerng, A. A. Al-Kahtani and H. Noh, J. Mater. Chem. C, 2023, 11, 13981 DOI: 10.1039/D3TC01990J

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