Issue 16, 2023

Achieving adjustable digital-to-analog conversion in memristors with embedded Cs2AgSbBr6 nanoparticles

Abstract

In this work, the proportions of Cs2AgSbBr6 nanoparticles (NPs) mixed in a PMMA film are adjusted to the digital and analog types of resistive switching (RS) behaviors in Ag/PMMA&Cs2AgSbBr6-NPs/ITO memristor devices. It is confirmed that when the concentration of NPs doped in the PMMA film is about 5 wt%, the memristor devices demonstrate bipolar digital RS behaviors with excellent electrical characteristics such as low operating voltage, high ON/OFF ratio (>500), good endurance (>800 cycles), and stable retention ability (>104 s). However, the devices showed a transition to analog-type memristive behavior when the concentration of NPs doped in the PMMA film is around 10 wt%, and several artificial synapse behaviors are successfully simulated. The device model simulation is also used to explore the effect of the NPs on the local electric field and growing filaments. Our work provides an opportunity to explore next-generation artificial synapse devices based on lead-free halide perovskites.

Graphical abstract: Achieving adjustable digital-to-analog conversion in memristors with embedded Cs2AgSbBr6 nanoparticles

Supplementary files

Article information

Article type
Paper
Submitted
14 nov 2022
Accepted
27 mar 2023
First published
28 mar 2023

Nanoscale, 2023,15, 7344-7351

Achieving adjustable digital-to-analog conversion in memristors with embedded Cs2AgSbBr6 nanoparticles

Y. Wang, N. Xu, Y. Yuan, W. Zhang, Q. Huang, X. Tang and F. Qi, Nanoscale, 2023, 15, 7344 DOI: 10.1039/D2NR06370K

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