Issue 6, 2023

Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

Abstract

GaAs/AlGaAs core–shell nanowires, typically having 250 nm diameter and 6 μm length, were grown on 2-inch Si wafers by the single process of molecular beam epitaxy using constituent Ga-induced self-catalysed vapor–liquid–solid growth. The growth was carried out without specific pre-treatment such as film deposition, patterning, and etching. The outermost Al-rich AlGaAs shells form a native oxide surface protection layer, which provides efficient passivation with elongated carrier lifetime. The 2-inch Si substrate sample exhibits a dark-colored feature due to the light absorption of the nanowires where the reflectance in the visible wavelengths is less than 2%. Homogeneous and optically luminescent and adsorptive GaAs-related core–shell nanowires were prepared over the wafer, showing the prospect for large-volume III–V heterostructure devices available with this approach as complementary device technologies for integration with silicon.

Graphical abstract: Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

Article information

Article type
Paper
Submitted
25 nov 2022
Accepted
23 jan 2023
First published
23 jan 2023
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2023,5, 1651-1663

Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

K. Minehisa, R. Murakami, H. Hashimoto, K. Nakama, K. Sakaguchi, R. Tsutsumi, T. Tanigawa, M. Yukimune, K. Nagashima, T. Yanagida, S. Sato, S. Hiura, A. Murayama and F. Ishikawa, Nanoscale Adv., 2023, 5, 1651 DOI: 10.1039/D2NA00848C

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