Issue 4, 2022

Flexible InP–ZnO nanowire heterojunction light emitting diodes

Abstract

Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely challenging task of integrating III–V or III–N semiconductor devices such as LEDs and lasers on a range of optoelectronic circuits or biochips. In this work, we report the demonstration of core–shell p-InP/n-ZnO heterojunction NW array LEDs. The emission from the devices consists of three peaks at room temperature due to conduction band-to-heavy hole band transition, conduction band-to-light hole band transition and recombination at the substrate. At 78 K, an additional peak due to Zn acceptor levels is observed, whereas the peak due to the conduction band-to-light hole band transition quenches. Flexible LEDs are then fabricated by embedding the NW arrays in SU-8 to enable subsequent lift-off from the substrate. Compared with the original on-substrate LED device, broader, red-shifted and multiple peaks are observed from the flexible devices, which may be due to non-uniform strain related effects in the NWs caused by the SU-8 film. A slightly higher series resistance as compared to the on-substrate device and significant Joule heating suggest that good heatsinking is required for these flexible devices. Nevertheless, our study paves a promising way towards flexible and low power LEDs.

Graphical abstract: Flexible InP–ZnO nanowire heterojunction light emitting diodes

Supplementary files

Article information

Article type
Communication
Submitted
11 okt 2021
Accepted
28 feb 2022
First published
28 feb 2022

Nanoscale Horiz., 2022,7, 446-454

Flexible InP–ZnO nanowire heterojunction light emitting diodes

N. Gagrani, K. Vora, L. Fu, C. Jagadish and H. H. Tan, Nanoscale Horiz., 2022, 7, 446 DOI: 10.1039/D1NH00535A

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