Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

Abstract

A metal–organic monolayer–semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface.