Tuning the layer-dependent doping effect of graphenes by C60

Minjiang Chen; Haiqing Zhou; Fang Yu; Huaichao Yang; Gang Wang; Jun He; Lianfeng Sun

doi:10.1039/C3NR02055J

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Tuning the layer-dependent doping effect of graphenes by C₆₀†

Minjiang Chen,^ab Haiqing Zhou,^ab Fang Yu,^ac Huaichao Yang,^ab Gang Wang,^ab Jun He*^a and Lianfeng Sun*^a

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* Corresponding authors

^a National Centre for Nanoscience and Technology, Beijing 100190, China
E-mail: slf@nanoctr.cn, hej@nanoctr.cn
Fax: +8610-62656765
Tel: +8610-82545617

^b University of Chinese Academy of Sciences, Beijing 100049, China

^c Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China

Abstract

In this work, the doping of n-layer graphenes with C₆₀ is investigated via Raman spectroscopy. The results indicate that C₆₀ can induce hole doping in graphenes, and that the doping level is closely related to the layer number of the graphenes. Moreover, the level of doping in the hybrid of C₆₀ on graphene (C₆₀/G) is more significant than that in the hybrid of graphene on C₆₀ (G/C₆₀).

This article is part of the themed collection: 10th Anniversary of NCNST, China

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Article information

DOI: https://doi.org/10.1039/C3NR02055J
Article type: Communication
Submitted: 25 apr 2013
Accepted: 07 jun 2013
First published: 10 jun 2013

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Nanoscale, 2013,5, 8359-8362

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Tuning the layer-dependent doping effect of graphenes by C₆₀

M. Chen, H. Zhou, F. Yu, H. Yang, G. Wang, J. He and L. Sun, Nanoscale, 2013, 5, 8359 DOI: 10.1039/C3NR02055J

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