Hydrogen-induced effects on the CVD growth of high-quality graphene structures

Abstract

In this work, the hydrogen-induced effects on the CVD growth of high-quality graphene have been systematically studied by regulating the growth parameters mainly related to hydrogen. Experimental results demonstrate that under a high hydrogen flow rate, the competitive etching effect during the growth process is more prominent and even shows macroscopic selectivity. Based on these understandings, the hexagonal graphene domains with diverse edge modalities are controllably synthesized on a large scale by elaborately managing the competitive etching effect of hydrogen that existed during the formation of graphene. This study not only contributes to the understanding of the mechanism of CVD growth, especially the effects of hydrogen used in the system, but also provides a facile method to synthesize high-quality graphene structures with trimmed edge morphologies.