Nanovoid-driven highly crystalline aluminum nitride and its application in solar-blind UV photodetectors

Moonsang Lee, Hyungbin Son, Hae-Yong Lee, Joonhee Moon, Heejin Kim, Ji-In Park, Zheng Liu, Myung Gwan Hahm, Mino Yang and Un Jeong Kim

J. Mater. Chem. C, 2020, 8, 14431
DOI: 10.1039/D0TC03208E

Marked effects of Al-rich AlN transition layers on the performance of CdZnTe films for solar-blind photodetector

Jianwen Gu, Yue Shen, Dandan Wen, Jian Huang, Jianmin Lai, Feng Gu, Meng Cao, Linjun Wang and Jiahua Min

Vacuum, 2021, 193, 110539
DOI: 10.1016/j.vacuum.2021.110539

Investigation of surface acoustic waves anisotropy on high-quality AlN/Sapphire grown by hydride vapor phase epitaxy

Wenxiu Dong, Xue Ji, Weifan Wang, Tengkun Li, Jun Huang, Taofei Zhou, Yingmin Fan and Ke Xu

Mater. Res. Express, 2019, 6, 095903
DOI: 10.1088/2053-1591/ab2c8c

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate

Jiahui Li, Ye Yuan, Tianren Cai, Hengyi Yin, Jiale Zhao, Jiakang Cao, Wenting Wan, Shuai Liu and Yu Zhao

Eur. Phys. J. Spec. Top., 2025, 234, 357
DOI: 10.1140/epjs/s11734-024-01433-7

Movement of a-type dislocations in AlN under electron beam irradiation

J Huang, M T Niu, X J Su and K Xu

J. Phys. D: Appl. Phys., 2020, 53, 065105
DOI: 10.1088/1361-6463/ab5496

Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor deposition

Yao Zhang, Yanhui Xing, Jun Han, Xuan Zhang, Xuemin Zhang, Li Zhang, Liguo Zhang, Tao Ju and Baoshun Zhang

Appl. Phys. Express, 2021, 14, 055503
DOI: 10.35848/1882-0786/abf31a

Effects of substrate pretreatment and annealing processes on AlN thin films prepared by EVPE

Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Xiangyu Lin, Yuxuan Song, Guodong Liu and Guifeng Chen

Materials Science in Semiconductor Processing, 2022, 150, 106975
DOI: 10.1016/j.mssp.2022.106975

4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Lei Yao, Yu Xu, Yuning Wang, Guobin Wang, Jianxi Xu, Jingjing Chen, Liang Wang, Shiping Guo, Bing Cao and Xu Ke

Jpn. J. Appl. Phys., 2024, 63, 115501
DOI: 10.35848/1347-4065/ad85b9

AlN formation by an Al/GaN substitution reaction

Marsetio Noorprajuda, Makoto Ohtsuka, Masayoshi Adachi and Hiroyuki Fukuyama

Sci Rep, 2020, 10
DOI: 10.1038/s41598-020-69992-y

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Ismail Altuntas, Merve Nur Kocak, Gamze Yolcu, Hasan Feyzi Budak, A. Emre Kasapoğlu, Sabit Horoz, Emre Gür and Ilkay Demir

Materials Science in Semiconductor Processing, 2021, 127, 105733
DOI: 10.1016/j.mssp.2021.105733

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Xiangyu Lin, Yuxuan Song, Guodong Liu and Guifeng Chen

ACS Omega, 2022, 7, 41100
DOI: 10.1021/acsomega.2c04626

Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

Xuejun Yan, Maosong Sun, Jianli Ji, Zhuokun He, Jicai Zhang and Wenhong Sun

Materials, 2024, 17, 327
DOI: 10.3390/ma17020327

Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE*

Di-Di Li, Jing-Jing Chen, Xu-Jun Su, Jun Huang, Mu-Tong Niu, Jin-Tong Xu and Ke Xu

Chinese Phys. B, 2021, 30, 036801
DOI: 10.1088/1674-1056/abd392

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

Yuxuan Song, Hui Zhang, Xiangyu Lin, Xinjian Xie, Chaoyuan Li, Lifeng Bian and Guifeng Chen

Materials Science in Semiconductor Processing, 2023, 168, 107843
DOI: 10.1016/j.mssp.2023.107843

Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations

Yuxuan Song, Hui Zhang, Nan Gao, Chaoyuan Li, Xinjian Xie, Lifeng Bian, Yulong Fang and Guifeng Chen

Materials Science in Semiconductor Processing, 2024, 182, 108682
DOI: 10.1016/j.mssp.2024.108682

Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source

Jun Huang, Qi Jia Chen, Mu Tong Niu and Ke Xu

Journal of Crystal Growth, 2020, 536, 125567
DOI: 10.1016/j.jcrysgro.2020.125567

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Chenguang He, Hualong Wu, Chuanyu Jia, Kang Zhang, Longfei He, Qiao Wang, Junze Li, Ningyang Liu, Shan Zhang, Wei Zhao, Zhitao Chen and Bo Shen

Crystal Growth & Design, 2021, 21, 3394
DOI: 10.1021/acs.cgd.1c00170

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

Hong Zhou, Chaoqun Zhang, Kun Zhang, Zifeng Huang, Fang Liu, Min Zhou, Hehe Gong, Shijun Tang, Wenjun Liu, Baiqi Wang, Yaolong Dong, Jinwen Liu, Shutong Zhou, Zuyin Xu, Shuai Wang, Zhihong Liu, Shengrui Xu, Chunfu Zhang, Xinqiang Wang, Han Wang, Yachao Zhang, Zhe Cheng, Tangsheng Chen, Yuhao Zhang, Yue Hao and Jincheng Zhang

Nat Commun, 2025, 17
DOI: 10.1038/s41467-025-67248-9

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Chuang Wang, Xiao-Dong Gao, Di-Di Li, Jing-Jing Chen, Jia-Fan Chen, Xiao-Ming Dong, Xiaodan Wang, Jun Huang, Xiong-Hui Zeng and Ke Xu

Chinese Phys. B, 2023, 32, 026802
DOI: 10.1088/1674-1056/ac6865

The relationship between annealing and nitrogen flow ratios during magnetron sputtering of AlN films

Yaqi Han, Hui Zhang, Xinjian Xie, Zefeng Liu, Kangqi Geng, Yun Yang, Yushuo Zhang and Guifeng Chen

Appl. Phys. A, 2023, 129
DOI: 10.1007/s00339-022-06311-4

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

Chaoyuan Li, Hui Zhang, Liwei Cao, Xiaosheng Zhang, Xiangyu Lin, Xinjian Xie, Lifeng Bian and Guifeng Chen

Crystal Growth & Design, 2024, 24, 2799
DOI: 10.1021/acs.cgd.3c01446