Issue 4, 2016

Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures

Abstract

Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

Graphical abstract: Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures

Article information

Article type
Paper
Submitted
08 okt 2015
Accepted
14 dec 2015
First published
17 dec 2015

Phys. Chem. Chem. Phys., 2016,18, 3159-3164

Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures

W. Zan, W. Geng, H. Liu and X. Yao, Phys. Chem. Chem. Phys., 2016, 18, 3159 DOI: 10.1039/C5CP06029J

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